Backgated Graphene Varactors With Quality Factor-Frequency Product Above 300 GHz

Jiaxuan Wen, V. R.S.K. Chaganti, Steven J. Koester

Research output: Contribution to journalArticlepeer-review


Back-gated, multifinger graphene RF varactors with a de-embedded quality factor frequency product, ${Q} \boldsymbol {\times } {f}$ , above 300 GHz are demonstrated. The effect of different design parameters on the tuning ratio and quality factor at 77 K and room temperature are explored at frequencies between 1 MHz and 18 GHz. The best device has ${Q}$ of 18.4 at 18 GHz. We also perform small signal equivalent circuit modeling on different designs to further explain the effect of design parameters on the RF performance. These results are promising for future integration of graphene varactors in high-speed analog applications.

Original languageEnglish (US)
Pages (from-to)820-823
Number of pages4
JournalIEEE Electron Device Letters
Issue number5
StatePublished - May 1 2022

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.


  • Graphene
  • Logic gates
  • Metals
  • Performance evaluation
  • Quantum Capacitance
  • Resistance
  • RF
  • Tuning
  • Varactors


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