Attraction of indirect excitons in van der Waals heterostructures with three semiconducting layers

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We study a capacitor made of three monolayers of transition-metal dichalcogenide separated by hexagonal boron nitride. We assume that the structure is symmetric with respect to the central layer plane. The symmetry includes the contacts: if the central layer is contacted by the negative electrode, both external layers are contacted by the positive one. As a result a strong enough voltage V induces electron-hole dipoles (indirect excitons) pointing toward one of the external layers. Antiparallel dipoles attract each other at large distances. Thus, the dipoles alternate in the central plane forming a two-dimensional antiferroelectric with negative binding energy per dipole. The charging of a three-layer device is a first-order transition, and we show that if V1 is the critical voltage required to create a single electron-hole pair and charge this capacitor by e, the macroscopic charge Qc=eSnc (S is the device area) enters the three-layer capacitor at a smaller critical voltage Vc<V1. In other words, the differential capacitance C(V) is infinite at V=Vc. We also show that in a contactless three-layer device, where the chemically different central layer has lower conduction and valence bands, optical excitation creates indirect excitons that attract each other, and therefore form antiferroelectric exciton droplets. Thus, the indirect exciton luminescence is redshifted compared to a two-layer device.

Original languageEnglish (US)
Article number165403
JournalPhysical Review B
Volume99
Issue number16
DOIs
StatePublished - Apr 1 2019

Fingerprint

Excitons
attraction
Heterojunctions
excitons
Capacitors
Electric potential
dipoles
Electrons
Boron nitride
Photoexcitation
capacitors
Valence bands
Conduction bands
Binding energy
Transition metals
Luminescence
Monolayers
Capacitance
electric potential
Electrodes

How much support was provided by MRSEC?

  • Primary

Reporting period for MRSEC

  • Period 6

Cite this

Attraction of indirect excitons in van der Waals heterostructures with three semiconducting layers. / Sammon, M.; Shklovskii, Boris I.

In: Physical Review B, Vol. 99, No. 16, 165403, 01.04.2019.

Research output: Contribution to journalArticle

@article{77746826bdc84542ac383ba524bad3de,
title = "Attraction of indirect excitons in van der Waals heterostructures with three semiconducting layers",
abstract = "We study a capacitor made of three monolayers of transition-metal dichalcogenide separated by hexagonal boron nitride. We assume that the structure is symmetric with respect to the central layer plane. The symmetry includes the contacts: if the central layer is contacted by the negative electrode, both external layers are contacted by the positive one. As a result a strong enough voltage V induces electron-hole dipoles (indirect excitons) pointing toward one of the external layers. Antiparallel dipoles attract each other at large distances. Thus, the dipoles alternate in the central plane forming a two-dimensional antiferroelectric with negative binding energy per dipole. The charging of a three-layer device is a first-order transition, and we show that if V1 is the critical voltage required to create a single electron-hole pair and charge this capacitor by e, the macroscopic charge Qc=eSnc (S is the device area) enters the three-layer capacitor at a smaller critical voltage Vc<V1. In other words, the differential capacitance C(V) is infinite at V=Vc. We also show that in a contactless three-layer device, where the chemically different central layer has lower conduction and valence bands, optical excitation creates indirect excitons that attract each other, and therefore form antiferroelectric exciton droplets. Thus, the indirect exciton luminescence is redshifted compared to a two-layer device.",
author = "M. Sammon and Shklovskii, {Boris I}",
year = "2019",
month = "4",
day = "1",
doi = "10.1103/PhysRevB.99.165403",
language = "English (US)",
volume = "99",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "16",

}

TY - JOUR

T1 - Attraction of indirect excitons in van der Waals heterostructures with three semiconducting layers

AU - Sammon, M.

AU - Shklovskii, Boris I

PY - 2019/4/1

Y1 - 2019/4/1

N2 - We study a capacitor made of three monolayers of transition-metal dichalcogenide separated by hexagonal boron nitride. We assume that the structure is symmetric with respect to the central layer plane. The symmetry includes the contacts: if the central layer is contacted by the negative electrode, both external layers are contacted by the positive one. As a result a strong enough voltage V induces electron-hole dipoles (indirect excitons) pointing toward one of the external layers. Antiparallel dipoles attract each other at large distances. Thus, the dipoles alternate in the central plane forming a two-dimensional antiferroelectric with negative binding energy per dipole. The charging of a three-layer device is a first-order transition, and we show that if V1 is the critical voltage required to create a single electron-hole pair and charge this capacitor by e, the macroscopic charge Qc=eSnc (S is the device area) enters the three-layer capacitor at a smaller critical voltage Vc<V1. In other words, the differential capacitance C(V) is infinite at V=Vc. We also show that in a contactless three-layer device, where the chemically different central layer has lower conduction and valence bands, optical excitation creates indirect excitons that attract each other, and therefore form antiferroelectric exciton droplets. Thus, the indirect exciton luminescence is redshifted compared to a two-layer device.

AB - We study a capacitor made of three monolayers of transition-metal dichalcogenide separated by hexagonal boron nitride. We assume that the structure is symmetric with respect to the central layer plane. The symmetry includes the contacts: if the central layer is contacted by the negative electrode, both external layers are contacted by the positive one. As a result a strong enough voltage V induces electron-hole dipoles (indirect excitons) pointing toward one of the external layers. Antiparallel dipoles attract each other at large distances. Thus, the dipoles alternate in the central plane forming a two-dimensional antiferroelectric with negative binding energy per dipole. The charging of a three-layer device is a first-order transition, and we show that if V1 is the critical voltage required to create a single electron-hole pair and charge this capacitor by e, the macroscopic charge Qc=eSnc (S is the device area) enters the three-layer capacitor at a smaller critical voltage Vc<V1. In other words, the differential capacitance C(V) is infinite at V=Vc. We also show that in a contactless three-layer device, where the chemically different central layer has lower conduction and valence bands, optical excitation creates indirect excitons that attract each other, and therefore form antiferroelectric exciton droplets. Thus, the indirect exciton luminescence is redshifted compared to a two-layer device.

UR - http://www.scopus.com/inward/record.url?scp=85064105978&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85064105978&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.99.165403

DO - 10.1103/PhysRevB.99.165403

M3 - Article

AN - SCOPUS:85064105978

VL - 99

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 16

M1 - 165403

ER -