Atomic scale stresses and strains in Ge/Si(001) nanopixels: An atomistic simulation study

Maxim A. Makeev, Wenbin Yu, Anupam Madhukar

Research output: Contribution to journalArticle

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Abstract

The atomic resolved displacements, stresses, strains, and the strain energy in laterally finite nanoscale Si(001) mesas, uncovered and covered with the lattice-mismatched Ge overlayer-induced stresses were investigated using atomistic simulations. Across the surface profile of the mesas and in the direction down to the substrate, the spatial variations of the stress were examined. Rapid changes from tensile in the interior of the Si mesa to compressive in the Ge overlayer in the hydrostatic stress and strain at the Ge/Si interface. Considerable inhomogeneity due to both finite geometry effects and the lattice-mismatched Ge overlayer-induced stresses were demonstrated by the atomic displacement fields.

Original languageEnglish (US)
Pages (from-to)4429-4443
Number of pages15
JournalJournal of Applied Physics
Volume96
Issue number8
DOIs
StatePublished - Oct 15 2004

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