Atomic-scale analysis of plasma-enhanced chemical vapor deposition from SiH4/H2 plasmas on Si substrates

Shyam Ramalingam, Dimitrios Maroudas, Eray S. Aydil

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

We present a systematic atomic-scale analysis of the interactions of SiH3 radicals originating in silane containing discharges with Si(001)-(2×1) and H-terminated Si(001)-(2×1) surfaces. Through simulations, we show that the hydrogen coverage of the surface is the key factor that controls both the surface reaction mechanism and the reaction probability. The SiH3 radical reacts readily with the pristine Si(001)-(2×1) surface during the initial stages of growth while its reactivity with the corresponding H-terminated surface is considerably lower. Deposition of a-Si:H from SiH3 radicals has also been simulated by repeatedly impinging SiH3 radicals onto Si(001)-(2×1) surfaces maintained at 500 °C. During deposition under these conditions, the dominant mechanism of hydrogen removal from the surface is through abstraction by SiH3 radicals, which subsequently return to the gas phase as silane. The important reaction processes that take place during film growth have been identified and their energetics has been analyzed.

Original languageEnglish (US)
Pages (from-to)673-678
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume507
StatePublished - Jan 1 1999
EventProceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 13 1998Apr 16 1998

Fingerprint Dive into the research topics of 'Atomic-scale analysis of plasma-enhanced chemical vapor deposition from SiH<sub>4</sub>/H<sub>2</sub> plasmas on Si substrates'. Together they form a unique fingerprint.

  • Cite this