Atomic-scale analysis of deposition and characterization of a-Si:H thin films grown from SiH radical precursor

Keyphrases

• A-Si 100%
• Adsorption 25%
• Atomic Hydrogen 25%
• Atomic-scale Analysis 100%
• Bond Density 25%
• Chemical Characterization 25%
• Columnar Structure 25%
• Dangling Bonds 50%
• Deposited Film 75%
• Desorption 25%
• Dissociation 50%
• Eley-Rideal Mechanism 25%
• Film Growth 50%
• Film Structure 25%
• Gas Phase 25%
• H-abstraction 25%
• Hydrogenated Amorphous Silicon Films 25%
• Impingement 25%
• Interaction Trajectory 25%
• Interstitial Hydrogen 25%
• Minority Species 25%
• Molecular Dynamics Simulation 50%
• Monohydrides 25%
• Morphology Surface 25%
• Radical Precursors 100%
• Reaction Probability 25%
• Rough Surface Morphology 25%
• Roughness Surface 25%
• Si(111) 25%
• Structural Characterization 25%
• Structural Quality 25%
• Structured Surface 25%
• Subsurface Layer 25%
• Surface Adsorption 25%
• Surface Composition 25%
• Surface Dangling Bonds 25%
• Surface Hydride 50%
• Surface Interaction 25%
• Surface Morphology 25%
• Surface Reaction 25%
• Surface Reactivity 25%
• Surface Roughness 25%
• Void Structure 25%

Engineering

• Atomic Hydrogen 33%
• Chemical Characterization 33%
• Columnar Structure 33%
• Dangling Bond 66%
• Dangling Bond Density 33%
• Deposited Film 100%
• Eley-Rideal Mechanism 33%
• Experimental Measurement 33%
• Gas-Phase 33%
• Good Agreement 33%
• Hydrogenated Amorphous Silicon 33%
• Producing Device 33%
• Scale Analysis 100%
• Si-Si Bond 33%
• Structure Surface 33%
• Subsurface 33%
• Surface Morphology 66%
• Thin Films 100%

Material Science

• Amorphous Silicon 14%
• Density 14%
• Desorption 14%
• Film 85%
• Film Growth 28%
• Hydride 28%
• Rough Surface 14%
• Surface (Surface Science) 100%
• Surface Morphology 28%
• Surface Reaction 14%
• Surface Roughness 14%
• Surface Structure 14%
• Thin Films 100%