Atomic level scanning transmission electron microscopy characterization of GaN/AlN quantum wells

The effects of beam broadening on scanning transmission electron microscopy measurements of the GaN/AlN multiple quantum wells were presented. The mechanisms and parameters to minimize these effects were also discussed. A comparison of the quantitatively measured intensity of the NK-edge versus position with the propagating beam intensity obtained from multislice calculations was carried out. The possible effects of strain in the structure on its energy-loss spectra and electronic states were also presented.