Atomic level scanning transmission electron microscopy characterization of GaN/AlN quantum wells

K. A. Mkhoyan, E. J. Kirkland, J. Silcox, E. S. Alldredge

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The effects of beam broadening on scanning transmission electron microscopy measurements of the GaN/AlN multiple quantum wells were presented. The mechanisms and parameters to minimize these effects were also discussed. A comparison of the quantitatively measured intensity of the NK-edge versus position with the propagating beam intensity obtained from multislice calculations was carried out. The possible effects of strain in the structure on its energy-loss spectra and electronic states were also presented.

Original languageEnglish (US)
Pages (from-to)738-746
Number of pages9
JournalJournal of Applied Physics
Volume96
Issue number1
DOIs
StatePublished - Jul 1 2004

Bibliographical note

Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.

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