Atomic layer deposition of silica and group IV metal oxides nanolaminates

Lijuan Zhong; Fang Chen; Stephen A. Campbell; Wayne L. Gladfelter

Atomic layer deposition of silica and group IV metal oxides nanolaminates

Lijuan Zhong, Fang Chen, Stephen A. Campbell, Wayne L. Gladfelter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

With alternating exposure of Si (100) substrates to tri (t-butoxy) silanol and anhydrous zirconium nitrate, mixed films of zirconia and silica were deposited at 162°C. The films were atomically smooth and their thickness was uniform across the entire substrate. The maximum growth rate of 12 Å/cycle implies deposition of more than one monolayer per cycle. A singular reflection in the low angle X-ray scattering pattern indicates an ordered bi-layer structure. Similar nanolaminate structures were also formed using anhydrous nitrates of hafnium and tin.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	C.R. Abernathy, E.P. Gusev, D. Schlom, S. Stemmer
Pages	201-205
Number of pages	5
Volume	786
State	Published - 2003
Event	Fundamentals of Novel Oxide/Semiconductor Interfaces Symposium - Boston, MA., United States Duration: Dec 1 2003 → Dec 4 2003

Other

Other	Fundamentals of Novel Oxide/Semiconductor Interfaces Symposium
Country/Territory	United States
City	Boston, MA.
Period	12/1/03 → 12/4/03

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@inproceedings{485f72fcaaf8490fadb2b609565d5b3c,

title = "Atomic layer deposition of silica and group IV metal oxides nanolaminates",

abstract = "With alternating exposure of Si (100) substrates to tri (t-butoxy) silanol and anhydrous zirconium nitrate, mixed films of zirconia and silica were deposited at 162°C. The films were atomically smooth and their thickness was uniform across the entire substrate. The maximum growth rate of 12 {\AA}/cycle implies deposition of more than one monolayer per cycle. A singular reflection in the low angle X-ray scattering pattern indicates an ordered bi-layer structure. Similar nanolaminate structures were also formed using anhydrous nitrates of hafnium and tin.",

author = "Lijuan Zhong and Fang Chen and Campbell, {Stephen A.} and Gladfelter, {Wayne L.}",

year = "2003",

language = "English (US)",

volume = "786",

pages = "201--205",

editor = "C.R. Abernathy and E.P. Gusev and D. Schlom and S. Stemmer",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "Fundamentals of Novel Oxide/Semiconductor Interfaces Symposium ; Conference date: 01-12-2003 Through 04-12-2003",

}

TY - GEN

T1 - Atomic layer deposition of silica and group IV metal oxides nanolaminates

AU - Zhong, Lijuan

AU - Chen, Fang

AU - Campbell, Stephen A.

AU - Gladfelter, Wayne L.

PY - 2003

Y1 - 2003

N2 - With alternating exposure of Si (100) substrates to tri (t-butoxy) silanol and anhydrous zirconium nitrate, mixed films of zirconia and silica were deposited at 162°C. The films were atomically smooth and their thickness was uniform across the entire substrate. The maximum growth rate of 12 Å/cycle implies deposition of more than one monolayer per cycle. A singular reflection in the low angle X-ray scattering pattern indicates an ordered bi-layer structure. Similar nanolaminate structures were also formed using anhydrous nitrates of hafnium and tin.

AB - With alternating exposure of Si (100) substrates to tri (t-butoxy) silanol and anhydrous zirconium nitrate, mixed films of zirconia and silica were deposited at 162°C. The films were atomically smooth and their thickness was uniform across the entire substrate. The maximum growth rate of 12 Å/cycle implies deposition of more than one monolayer per cycle. A singular reflection in the low angle X-ray scattering pattern indicates an ordered bi-layer structure. Similar nanolaminate structures were also formed using anhydrous nitrates of hafnium and tin.

UR - http://www.scopus.com/inward/record.url?scp=2442474299&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2442474299&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:2442474299

VL - 786

SP - 201

EP - 205

BT - Materials Research Society Symposium - Proceedings

A2 - Abernathy, C.R.

A2 - Gusev, E.P.

A2 - Schlom, D.

A2 - Stemmer, S.

T2 - Fundamentals of Novel Oxide/Semiconductor Interfaces Symposium

Y2 - 1 December 2003 through 4 December 2003

ER -

Atomic layer deposition of silica and group IV metal oxides nanolaminates

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