Atomic layer deposition of silica and group IV metal oxides nanolaminates

Lijuan Zhong, Fang Chen, Stephen A. Campbell, Wayne L. Gladfelter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

With alternating exposure of Si (100) substrates to tri (t-butoxy) silanol and anhydrous zirconium nitrate, mixed films of zirconia and silica were deposited at 162°C. The films were atomically smooth and their thickness was uniform across the entire substrate. The maximum growth rate of 12 Å/cycle implies deposition of more than one monolayer per cycle. A singular reflection in the low angle X-ray scattering pattern indicates an ordered bi-layer structure. Similar nanolaminate structures were also formed using anhydrous nitrates of hafnium and tin.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsC.R. Abernathy, E.P. Gusev, D. Schlom, S. Stemmer
Pages201-205
Number of pages5
Volume786
StatePublished - 2003
EventFundamentals of Novel Oxide/Semiconductor Interfaces Symposium - Boston, MA., United States
Duration: Dec 1 2003Dec 4 2003

Other

OtherFundamentals of Novel Oxide/Semiconductor Interfaces Symposium
CountryUnited States
CityBoston, MA.
Period12/1/0312/4/03

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