Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

J. R. Avila; A. W. Peters; Zhanyong Li; M. A. Ortuño; A. B.F. Martinson; C. J. Cramer; J. T. Hupp; O. K. Farha

doi:10.1039/c6dt02572b

Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

J. R. Avila, A. W. Peters, Zhanyong Li, M. A. Ortuño, A. B.F. Martinson, C. J. Cramer, J. T. Hupp, O. K. Farha

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Abstract

To grow films of Cu₂O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).

Original language	English (US)
Pages (from-to)	5790-5795
Number of pages	6
Journal	Dalton Transactions
Volume	46
Issue number	18
DOIs	https://doi.org/10.1039/c6dt02572b
State	Published - 2017

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© 2017 The Royal Society of Chemistry.

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10.1039/c6dt02572b

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title = "Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water",

abstract = "To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 {\AA} per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).",

author = "Avila, {J. R.} and Peters, {A. W.} and Zhanyong Li and Ortu{\~n}o, {M. A.} and Martinson, {A. B.F.} and Cramer, {C. J.} and Hupp, {J. T.} and Farha, {O. K.}",

note = "Publisher Copyright: {\textcopyright} 2017 The Royal Society of Chemistry.",

year = "2017",

doi = "10.1039/c6dt02572b",

language = "English (US)",

volume = "46",

pages = "5790--5795",

journal = "Dalton Transactions",

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publisher = "Royal Society of Chemistry",

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TY - JOUR

T1 - Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

AU - Avila, J. R.

AU - Peters, A. W.

AU - Li, Zhanyong

AU - Ortuño, M. A.

AU - Martinson, A. B.F.

AU - Cramer, C. J.

AU - Hupp, J. T.

AU - Farha, O. K.

PY - 2017

Y1 - 2017

N2 - To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).

AB - To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).

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UR - http://www.scopus.com/inward/citedby.url?scp=85021745757&partnerID=8YFLogxK

U2 - 10.1039/c6dt02572b

DO - 10.1039/c6dt02572b

M3 - Article

C2 - 28406498

AN - SCOPUS:85021745757

SN - 1477-9226

VL - 46

SP - 5790

EP - 5795

JO - Dalton Transactions

JF - Dalton Transactions

IS - 18

ER -

Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

Abstract

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Energy Frontier Research Center For Inorganometallic Catalyst Design (DE-SC0012702)

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Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

Abstract

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Energy Frontier Research Center For Inorganometallic Catalyst Design (DE-SC0012702)

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