In this letter we detail the effects of arsine on Ge1-xSi x growth rate and doping. We have observed for the first time that the growth process is no longer well described by a simple first-order reaction. The growth-rate data instead are consistent with a second-order reaction, with a substantial change in the activation energy. The electron carrier concentration and mobility have been measured as functions of arsine flow and compared to similar data from silicon growth.
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