Arsenic doping of GeSi epitaxial layers grown in the dichlorosilane/germane system

W. H. Liu, J. D. Leighton, S. A. Campbell

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this letter we detail the effects of arsine on Ge1-xSi x growth rate and doping. We have observed for the first time that the growth process is no longer well described by a simple first-order reaction. The growth-rate data instead are consistent with a second-order reaction, with a substantial change in the activation energy. The electron carrier concentration and mobility have been measured as functions of arsine flow and compared to similar data from silicon growth.

Original languageEnglish (US)
Pages (from-to)1676-1678
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number14
DOIs
StatePublished - 1992

Bibliographical note

Copyright:
Copyright 2007 Elsevier B.V., All rights reserved.

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