Arsenic doping of GeSi epitaxial layers grown in the dichlorosilane/germane system

W. H. Liu; J. D. Leighton; S. A. Campbell

doi:10.1063/1.108448

Arsenic doping of GeSi epitaxial layers grown in the dichlorosilane/germane system

W. H. Liu, J. D. Leighton, S. A. Campbell

Electrical and Computer Engineering

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Abstract

In this letter we detail the effects of arsine on Ge_1-xSi _x growth rate and doping. We have observed for the first time that the growth process is no longer well described by a simple first-order reaction. The growth-rate data instead are consistent with a second-order reaction, with a substantial change in the activation energy. The electron carrier concentration and mobility have been measured as functions of arsine flow and compared to similar data from silicon growth.

Original language	English (US)
Pages (from-to)	1676-1678
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	14
DOIs	https://doi.org/10.1063/1.108448
State	Published - 1992

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Copyright 2007 Elsevier B.V., All rights reserved.

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@article{358aa1b6d6fb453897ac27289b52d3fb,

title = "Arsenic doping of GeSi epitaxial layers grown in the dichlorosilane/germane system",

abstract = "In this letter we detail the effects of arsine on Ge1-xSi x growth rate and doping. We have observed for the first time that the growth process is no longer well described by a simple first-order reaction. The growth-rate data instead are consistent with a second-order reaction, with a substantial change in the activation energy. The electron carrier concentration and mobility have been measured as functions of arsine flow and compared to similar data from silicon growth.",

author = "Liu, {W. H.} and Leighton, {J. D.} and Campbell, {S. A.}",

year = "1992",

doi = "10.1063/1.108448",

language = "English (US)",

volume = "61",

pages = "1676--1678",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Arsenic doping of GeSi epitaxial layers grown in the dichlorosilane/germane system

AU - Liu, W. H.

AU - Leighton, J. D.

AU - Campbell, S. A.

PY - 1992

Y1 - 1992

N2 - In this letter we detail the effects of arsine on Ge1-xSi x growth rate and doping. We have observed for the first time that the growth process is no longer well described by a simple first-order reaction. The growth-rate data instead are consistent with a second-order reaction, with a substantial change in the activation energy. The electron carrier concentration and mobility have been measured as functions of arsine flow and compared to similar data from silicon growth.

AB - In this letter we detail the effects of arsine on Ge1-xSi x growth rate and doping. We have observed for the first time that the growth process is no longer well described by a simple first-order reaction. The growth-rate data instead are consistent with a second-order reaction, with a substantial change in the activation energy. The electron carrier concentration and mobility have been measured as functions of arsine flow and compared to similar data from silicon growth.

UR - http://www.scopus.com/inward/record.url?scp=30244489197&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30244489197&partnerID=8YFLogxK

U2 - 10.1063/1.108448

DO - 10.1063/1.108448

M3 - Article

AN - SCOPUS:30244489197

SN - 0003-6951

VL - 61

SP - 1676

EP - 1678

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Arsenic doping of GeSi epitaxial layers grown in the dichlorosilane/germane system

Abstract

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