Arsenic cap layer desorption and the formation of GaAs(001)c(4×4) surfaces

I. Karpov, N. Venkateswaran, G. Bratina, W. Gladfelter, A. Franciosi, L. Sorba

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24 Scopus citations

Abstract

GaAs(001)c(4×4) surfaces were obtained in the 380-450°C temperature range by thermal desorption of As cap layers from substrates prepared by molecular beam epitaxy. Although reflection high-energy electron diffraction patterns showed little change in the temperature range explored, in situ scanning tunneling microscopy and Auger spectroscopy, complemented by ex situ atomic force microscopy, indicate that in the lower-temperature range examined up to 11%-12% of the surface may still be occupied by adsorbed As in the form of wires and particles preferentially oriented along 〈100〉 directions.

Original languageEnglish (US)
Pages (from-to)2041-2048
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume13
Issue number5
DOIs
StatePublished - Sep 1 1995

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