Are Si/SiGe tunneling field-effect transistors a good idea?

S. J. Koester, I. Lauer, A. Majumdar, J. Cai, J. Sleight, S. Bedell, P. Solomon, S. Laux, L. Chang, S. Koswatta, W. Haensch, P. Tomasini, S. Thomas

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

Tunneling field effect transistors (TFETs) are a device technology that has the potential to achieve sub-60-mV/decade subthreshold slope and therefore could potentially overcome the power / performance bottleneck facing the CMOS industry today. It would be highly desirable to fabricate such devices using Si-based materials due to the proven capability of Si for VLSI circuits. However the large, indirect band gap of Si is not conducive to achieving large band-to-band tunneling currents. This paper presents experimental results on Si/SiGe heterojunction tunneling transistors (HETTs), where it is demonstrated that increasing the heterojunction band offset leads to enhanced device performance. An analysis is also provided addressing whether or not Si-based materials are suitable for TFETs or if material systems with direct band gaps and that allow more aggressive heterostructure engineering will be required to achieve the performance levels necessary for practical applications.

Original languageEnglish (US)
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
Pages357-361
Number of pages5
Edition6
DOIs
StatePublished - Dec 1 2010
Event4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 10 2010Oct 15 2010

Publication series

NameECS Transactions
Number6
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/15/10

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