Applied physics: Imaging spin transport in lateral ferromagnet/ semiconductor structures

S. A. Crooker, M. Furis, X. Lou, C. Adelmann, D. L. Smith, C. J. Palmstrøm, P. A. Crowell

Research output: Contribution to journalArticle

259 Scopus citations

Abstract

We directly imaged electrical spin injection and accumulation in the gallium arsenide channel of lateral spin-transport devices, which have ferromagnetic source and drain tunnel-barrier contacts. The emission of spins from the source was observed, and a region of spin accumulation was imaged near the ferromagnetic drain contact. Both injected and accumulated spins have the same orientation (antiparallel to the contact magnetization), and we show that the accumulated spin polarization flows away from the drain (against the net electron current), indicating that electron spins are polarized by reflection from the ferromagnetic drain contact. The electrical conductance can be modulated by controlling the spin orientation of optically injected electrons flowing through the drain.

Original languageEnglish (US)
Pages (from-to)2191-2195
Number of pages5
JournalScience
Volume309
Issue number5744
DOIs
StatePublished - Sep 30 2005

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    Crooker, S. A., Furis, M., Lou, X., Adelmann, C., Smith, D. L., Palmstrøm, C. J., & Crowell, P. A. (2005). Applied physics: Imaging spin transport in lateral ferromagnet/ semiconductor structures. Science, 309(5744), 2191-2195. https://doi.org/10.1126/science.1116865