Applications of electrochemistry for novel wide bandgap GaN devices

S. H. Park, C. Zhang, G. Yuan, D. Chen, J. Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electrochemical (EC) etching having large selectivity based on the conductivity of n-type GaN was investigated to demonstrate the feasibility of novel wide bandgap GaN devices. The EC etching relies on the generation of holes at the GaN/electrolyte surface for oxidation and chemical dissolution. Depending on the layer conductivity and applied bias, the EC etching may cause no effect, nanoscale porosification, or complete etching of GaN. The EC etching has been applied to different areas of GaN material and device technologies, including layer separation, the preparation of flexible GaN membrane devices, and the formation of distributed Bragg reflector for photonic applications.

Original languageEnglish (US)
Title of host publicationWide Bandgap Semiconductor Materials and Devices 16
EditorsS. Jang, K. C. Mishra, K. Shenai, C. O'Dwyer, G. W. Hunter, F. Ren
PublisherElectrochemical Society Inc.
Pages143-149
Number of pages7
Edition1
ISBN (Electronic)9781607685395
DOIs
StatePublished - Jan 1 2015
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting - Chicago, United States
Duration: May 24 2015May 28 2015

Publication series

NameECS Transactions
Number1
Volume66
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting
CountryUnited States
CityChicago
Period5/24/155/28/15

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