Electrochemical (EC) etching having large selectivity based on the conductivity of n-type GaN was investigated to demonstrate the feasibility of novel wide bandgap GaN devices. The EC etching relies on the generation of holes at the GaN/electrolyte surface for oxidation and chemical dissolution. Depending on the layer conductivity and applied bias, the EC etching may cause no effect, nanoscale porosification, or complete etching of GaN. The EC etching has been applied to different areas of GaN material and device technologies, including layer separation, the preparation of flexible GaN membrane devices, and the formation of distributed Bragg reflector for photonic applications.
|Original language||English (US)|
|Title of host publication||Wide Bandgap Semiconductor Materials and Devices 16|
|Editors||S. Jang, K. Shenai, G. W. Hunter, F. Ren, C. O'Dwyer, K. C. Mishra|
|Publisher||Electrochemical Society Inc.|
|Number of pages||7|
|State||Published - 2015|
|Event||Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting - Chicago, United States|
Duration: May 24 2015 → May 28 2015
|Other||Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting|
|Period||5/24/15 → 5/28/15|
Bibliographical notePublisher Copyright:
© The Electrochemical Society.