Applications of electrochemistry for novel wide bandgap GaN devices

S. H. Park; C. Zhang; G. Yuan; D. Chen; J. Han

doi:10.1149/06601.0143ecst

Applications of electrochemistry for novel wide bandgap GaN devices

S. H. Park, C. Zhang, G. Yuan, D. Chen, J. Han

Mechanical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Electrochemical (EC) etching having large selectivity based on the conductivity of n-type GaN was investigated to demonstrate the feasibility of novel wide bandgap GaN devices. The EC etching relies on the generation of holes at the GaN/electrolyte surface for oxidation and chemical dissolution. Depending on the layer conductivity and applied bias, the EC etching may cause no effect, nanoscale porosification, or complete etching of GaN. The EC etching has been applied to different areas of GaN material and device technologies, including layer separation, the preparation of flexible GaN membrane devices, and the formation of distributed Bragg reflector for photonic applications.

Original language	English (US)
Title of host publication	Wide Bandgap Semiconductor Materials and Devices 16
Editors	S. Jang, K. Shenai, G. W. Hunter, F. Ren, C. O'Dwyer, K. C. Mishra
Publisher	Electrochemical Society Inc.
Pages	143-149
Number of pages	7
Edition	1
ISBN (Electronic)	9781607685913
DOIs	https://doi.org/10.1149/06601.0143ecst
State	Published - 2015
Event	Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting - Chicago, United States Duration: May 24 2015 → May 28 2015

Publication series

Name	ECS Transactions
Number	1
Volume	66
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting
Country/Territory	United States
City	Chicago
Period	5/24/15 → 5/28/15

Bibliographical note

Publisher Copyright:
© The Electrochemical Society.

Publisher link

10.1149/06601.0143ecst

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Park, S. H., Zhang, C., Yuan, G., Chen, D., & Han, J. (2015). Applications of electrochemistry for novel wide bandgap GaN devices. In S. Jang, K. Shenai, G. W. Hunter, F. Ren, C. O'Dwyer, & K. C. Mishra (Eds.), Wide Bandgap Semiconductor Materials and Devices 16 (1 ed., pp. 143-149). (ECS Transactions; Vol. 66, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/06601.0143ecst

Applications of electrochemistry for novel wide bandgap GaN devices. / Park, S. H.; Zhang, C.; Yuan, G.; Chen, D.; Han, J.

Wide Bandgap Semiconductor Materials and Devices 16. ed. / S. Jang; K. Shenai; G. W. Hunter; F. Ren; C. O'Dwyer; K. C. Mishra. 1. ed. Electrochemical Society Inc., 2015. p. 143-149 (ECS Transactions; Vol. 66, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Park, SH, Zhang, C, Yuan, G, Chen, D & Han, J 2015, Applications of electrochemistry for novel wide bandgap GaN devices. in S Jang, K Shenai, GW Hunter, F Ren, C O'Dwyer & KC Mishra (eds), Wide Bandgap Semiconductor Materials and Devices 16. 1 edn, ECS Transactions, no. 1, vol. 66, Electrochemical Society Inc., pp. 143-149, Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting, Chicago, United States, 5/24/15. https://doi.org/10.1149/06601.0143ecst

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abstract = "Electrochemical (EC) etching having large selectivity based on the conductivity of n-type GaN was investigated to demonstrate the feasibility of novel wide bandgap GaN devices. The EC etching relies on the generation of holes at the GaN/electrolyte surface for oxidation and chemical dissolution. Depending on the layer conductivity and applied bias, the EC etching may cause no effect, nanoscale porosification, or complete etching of GaN. The EC etching has been applied to different areas of GaN material and device technologies, including layer separation, the preparation of flexible GaN membrane devices, and the formation of distributed Bragg reflector for photonic applications.",

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AB - Electrochemical (EC) etching having large selectivity based on the conductivity of n-type GaN was investigated to demonstrate the feasibility of novel wide bandgap GaN devices. The EC etching relies on the generation of holes at the GaN/electrolyte surface for oxidation and chemical dissolution. Depending on the layer conductivity and applied bias, the EC etching may cause no effect, nanoscale porosification, or complete etching of GaN. The EC etching has been applied to different areas of GaN material and device technologies, including layer separation, the preparation of flexible GaN membrane devices, and the formation of distributed Bragg reflector for photonic applications.

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Applications of electrochemistry for novel wide bandgap GaN devices

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