APPLICATION OF LARGE-SCALE SIMULATION TO INTELLIGENT MATERIALS PROCESSING: MODELLING OF CZOCHRALSKI GROWTH OF SINGLE CRYSTALS.

R. A. Brown; P. A. Sackinger; P. D. Thomas; J. J. Derby; L. J. Atherton

APPLICATION OF LARGE-SCALE SIMULATION TO INTELLIGENT MATERIALS PROCESSING: MODELLING OF CZOCHRALSKI GROWTH OF SINGLE CRYSTALS.

R. A. Brown
, P. A. Sackinger
, P. D. Thomas
, J. J. Derby
, L. J. Atherton

Chemical Engineering and Materials Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

The application of large-scale numerical simulation to the design and control of systems for growth of semiconductor materials from the melt is demonstrated by analysis of Czochralski (CZ) growth of silicon and Liquid-Encapsulated-Czochralski (LEC) growth of GaAs. The Thermal-Capillary model used for analysis of these systems includes the interactions between heat transfer and capillarity in setting the shapes of the growing crystal, the melt/solid interface and the melt/ambient meniscus. Calculations are based on a robust finite element algorithm that uses Newton's method to solve simultaneously for the moving interfaces and the field variables.

Original language	English (US)
Title of host publication	Unknown Host Publication Title
Editors	S.K. Samanta, R. Komanduri, R. McMeeking, M.M. Chen, A. Tseng
Publisher	ASME
Pages	331-348
Number of pages	18
State	Published - Dec 1 1987

Find It

Find It at U of M Libraries

Cite this

APPLICATION OF LARGE-SCALE SIMULATION TO INTELLIGENT MATERIALS PROCESSING: MODELLING OF CZOCHRALSKI GROWTH OF SINGLE CRYSTALS. / Brown, R. A.; Sackinger, P. A.; Thomas, P. D. et al.
Unknown Host Publication Title. ed. / S.K. Samanta; R. Komanduri; R. McMeeking; M.M. Chen; A. Tseng. ASME, 1987. p. 331-348.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

@inproceedings{7d5c84fc7b974e8f8e574b7bbc6fcc60,

title = "APPLICATION OF LARGE-SCALE SIMULATION TO INTELLIGENT MATERIALS PROCESSING: MODELLING OF CZOCHRALSKI GROWTH OF SINGLE CRYSTALS.",

abstract = "The application of large-scale numerical simulation to the design and control of systems for growth of semiconductor materials from the melt is demonstrated by analysis of Czochralski (CZ) growth of silicon and Liquid-Encapsulated-Czochralski (LEC) growth of GaAs. The Thermal-Capillary model used for analysis of these systems includes the interactions between heat transfer and capillarity in setting the shapes of the growing crystal, the melt/solid interface and the melt/ambient meniscus. Calculations are based on a robust finite element algorithm that uses Newton's method to solve simultaneously for the moving interfaces and the field variables.",

author = "Brown, \{R. A.\} and Sackinger, \{P. A.\} and Thomas, \{P. D.\} and Derby, \{J. J.\} and Atherton, \{L. J.\}",

year = "1987",

month = dec,

day = "1",

language = "English (US)",

pages = "331--348",

editor = "S.K. Samanta and R. Komanduri and R. McMeeking and M.M. Chen and A. Tseng",

booktitle = "Unknown Host Publication Title",

publisher = "ASME",

}

TY - GEN

T1 - APPLICATION OF LARGE-SCALE SIMULATION TO INTELLIGENT MATERIALS PROCESSING

T2 - MODELLING OF CZOCHRALSKI GROWTH OF SINGLE CRYSTALS.

AU - Brown, R. A.

AU - Sackinger, P. A.

AU - Thomas, P. D.

AU - Derby, J. J.

AU - Atherton, L. J.

PY - 1987/12/1

Y1 - 1987/12/1

N2 - The application of large-scale numerical simulation to the design and control of systems for growth of semiconductor materials from the melt is demonstrated by analysis of Czochralski (CZ) growth of silicon and Liquid-Encapsulated-Czochralski (LEC) growth of GaAs. The Thermal-Capillary model used for analysis of these systems includes the interactions between heat transfer and capillarity in setting the shapes of the growing crystal, the melt/solid interface and the melt/ambient meniscus. Calculations are based on a robust finite element algorithm that uses Newton's method to solve simultaneously for the moving interfaces and the field variables.

AB - The application of large-scale numerical simulation to the design and control of systems for growth of semiconductor materials from the melt is demonstrated by analysis of Czochralski (CZ) growth of silicon and Liquid-Encapsulated-Czochralski (LEC) growth of GaAs. The Thermal-Capillary model used for analysis of these systems includes the interactions between heat transfer and capillarity in setting the shapes of the growing crystal, the melt/solid interface and the melt/ambient meniscus. Calculations are based on a robust finite element algorithm that uses Newton's method to solve simultaneously for the moving interfaces and the field variables.

UR - https://www.scopus.com/pages/publications/0023595927

UR - https://www.scopus.com/pages/publications/0023595927#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:0023595927

SP - 331

EP - 348

BT - Unknown Host Publication Title

A2 - Samanta, S.K.

A2 - Komanduri, R.

A2 - McMeeking, R.

A2 - Chen, M.M.

A2 - Tseng, A.

PB - ASME

ER -

APPLICATION OF LARGE-SCALE SIMULATION TO INTELLIGENT MATERIALS PROCESSING: MODELLING OF CZOCHRALSKI GROWTH OF SINGLE CRYSTALS.

Abstract

Find It

Other files and links

Fingerprint

Cite this