APPLICATION OF LARGE-SCALE SIMULATION TO INTELLIGENT MATERIALS PROCESSING: MODELLING OF CZOCHRALSKI GROWTH OF SINGLE CRYSTALS.

R. A. Brown, P. A. Sackinger, P. D. Thomas, J. J. Derby, L. J. Atherton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

The application of large-scale numerical simulation to the design and control of systems for growth of semiconductor materials from the melt is demonstrated by analysis of Czochralski (CZ) growth of silicon and Liquid-Encapsulated-Czochralski (LEC) growth of GaAs. The Thermal-Capillary model used for analysis of these systems includes the interactions between heat transfer and capillarity in setting the shapes of the growing crystal, the melt/solid interface and the melt/ambient meniscus. Calculations are based on a robust finite element algorithm that uses Newton's method to solve simultaneously for the moving interfaces and the field variables.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
EditorsS.K. Samanta, R. Komanduri, R. McMeeking, M.M. Chen, A. Tseng
PublisherASME
Pages331-348
Number of pages18
StatePublished - Dec 1 1987

Fingerprint Dive into the research topics of 'APPLICATION OF LARGE-SCALE SIMULATION TO INTELLIGENT MATERIALS PROCESSING: MODELLING OF CZOCHRALSKI GROWTH OF SINGLE CRYSTALS.'. Together they form a unique fingerprint.

  • Cite this

    Brown, R. A., Sackinger, P. A., Thomas, P. D., Derby, J. J., & Atherton, L. J. (1987). APPLICATION OF LARGE-SCALE SIMULATION TO INTELLIGENT MATERIALS PROCESSING: MODELLING OF CZOCHRALSKI GROWTH OF SINGLE CRYSTALS. In S. K. Samanta, R. Komanduri, R. McMeeking, M. M. Chen, & A. Tseng (Eds.), Unknown Host Publication Title (pp. 331-348). ASME.