The application of large-scale numerical simulation to the design and control of systems for growth of semiconductor materials from the melt is demonstrated by analysis of Czochralski (CZ) growth of silicon and Liquid-Encapsulated-Czochralski (LEC) growth of GaAs. The Thermal-Capillary model used for analysis of these systems includes the interactions between heat transfer and capillarity in setting the shapes of the growing crystal, the melt/solid interface and the melt/ambient meniscus. Calculations are based on a robust finite element algorithm that uses Newton's method to solve simultaneously for the moving interfaces and the field variables.
|Original language||English (US)|
|Title of host publication||Unknown Host Publication Title|
|Editors||S.K. Samanta, R. Komanduri, R. McMeeking, M.M. Chen, A. Tseng|
|Number of pages||18|
|State||Published - Dec 1 1987|