Antisolvent- and Annealing-Free Deposition for Highly Stable Efficient Perovskite Solar Cells via Modified ZnO

Ziyu Wang; Xuejie Zhu; Jiangshan Feng; Chenyu Wang; Cong Zhang; Xiaodong Ren; Shashank Priya; Shengzhong Liu; Dong Yang

doi:10.1002/advs.202002860

Antisolvent- and Annealing-Free Deposition for Highly Stable Efficient Perovskite Solar Cells via Modified ZnO

Ziyu Wang, Xuejie Zhu, Jiangshan Feng, Chenyu Wang, Cong Zhang, Xiaodong Ren, Shashank Priya, Shengzhong Liu, Dong Yang

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

Even though ZnO is commonly used as the ETL in the perovskite solar cell (PSC), the reactivity of perovskite deposited thereupon limits its performance. Herein, an ethylene diamine tetraacetic acid-complexed ZnO (E-ZnO) is successfully developed as a significantly improved electron selective layer (ESLs) in perovskite device. It is found that E-ZnO exhibits higher electron mobility and better matched energy level with perovskite compared to ZnO. In addition, in order to eliminate the proton transfer reaction at the ZnO/perovskite interface, a high quality perovskite film fabrication process that requires neither annealing nor antisolvent is developed. By taking advantages of both E-ZnO and the new process, the highest efficiency of 20.39% is obtained for PSCs based on E-ZnO. Moreover, the efficiency of unencapsulated PSCs with E-ZnO retains 95% of its initial value exposed in an ambient atmosphere after 3604 h. This work provides a feasible path toward high performance of PSCs, and it is believed that the present work will facilitate transition of perovskite photovoltaics in flexible and tandem devices since the annealing- and antisolvent-free technology.

Original language	English (US)
Article number	2002860
Journal	Advanced Science
Volume	8
Issue number	13
DOIs	https://doi.org/10.1002/advs.202002860
State	Published - Jul 7 2021
Externally published	Yes

Bibliographical note

Funding Information:
The authors acknowledge support from the National Natural Science Foundation of China (61975106), the Shaanxi Technical Innovation Guidance Project (2018HJCG‐17), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDA17040506), the National Key Research and Development Program of China (2016YFA0202403), the National University Research Fund (GK261001009), the Innovative Research Team (IRT_14R33), the 111 Project (B14041), and the Chinese National 1000‐Talents‐Plan Program. Unfunded collaborative work of S.P. and D.Y. was supported through the International Institute of Biosensing (IIB) headquartered at Penn State University.

Publisher Copyright:
© 2021 The Authors. Advanced Science published by Wiley-VCH GmbH

Keywords

chelation
efficiency
perovskite solar cells
stability
ZnO

PubMed: MeSH publication types

Journal Article

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Antisolvent- and Annealing-Free Deposition for Highly Stable Efficient Perovskite Solar Cells via Modified ZnO",

abstract = "Even though ZnO is commonly used as the ETL in the perovskite solar cell (PSC), the reactivity of perovskite deposited thereupon limits its performance. Herein, an ethylene diamine tetraacetic acid-complexed ZnO (E-ZnO) is successfully developed as a significantly improved electron selective layer (ESLs) in perovskite device. It is found that E-ZnO exhibits higher electron mobility and better matched energy level with perovskite compared to ZnO. In addition, in order to eliminate the proton transfer reaction at the ZnO/perovskite interface, a high quality perovskite film fabrication process that requires neither annealing nor antisolvent is developed. By taking advantages of both E-ZnO and the new process, the highest efficiency of 20.39% is obtained for PSCs based on E-ZnO. Moreover, the efficiency of unencapsulated PSCs with E-ZnO retains 95% of its initial value exposed in an ambient atmosphere after 3604 h. This work provides a feasible path toward high performance of PSCs, and it is believed that the present work will facilitate transition of perovskite photovoltaics in flexible and tandem devices since the annealing- and antisolvent-free technology.",

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note = "Funding Information: The authors acknowledge support from the National Natural Science Foundation of China (61975106), the Shaanxi Technical Innovation Guidance Project (2018HJCG‐17), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDA17040506), the National Key Research and Development Program of China (2016YFA0202403), the National University Research Fund (GK261001009), the Innovative Research Team (IRT_14R33), the 111 Project (B14041), and the Chinese National 1000‐Talents‐Plan Program. Unfunded collaborative work of S.P. and D.Y. was supported through the International Institute of Biosensing (IIB) headquartered at Penn State University. Publisher Copyright: {\textcopyright} 2021 The Authors. Advanced Science published by Wiley-VCH GmbH",

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AU - Wang, Ziyu

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AU - Feng, Jiangshan

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AU - Zhang, Cong

AU - Ren, Xiaodong

AU - Priya, Shashank

AU - Liu, Shengzhong

AU - Yang, Dong

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PY - 2021/7/7

Y1 - 2021/7/7

N2 - Even though ZnO is commonly used as the ETL in the perovskite solar cell (PSC), the reactivity of perovskite deposited thereupon limits its performance. Herein, an ethylene diamine tetraacetic acid-complexed ZnO (E-ZnO) is successfully developed as a significantly improved electron selective layer (ESLs) in perovskite device. It is found that E-ZnO exhibits higher electron mobility and better matched energy level with perovskite compared to ZnO. In addition, in order to eliminate the proton transfer reaction at the ZnO/perovskite interface, a high quality perovskite film fabrication process that requires neither annealing nor antisolvent is developed. By taking advantages of both E-ZnO and the new process, the highest efficiency of 20.39% is obtained for PSCs based on E-ZnO. Moreover, the efficiency of unencapsulated PSCs with E-ZnO retains 95% of its initial value exposed in an ambient atmosphere after 3604 h. This work provides a feasible path toward high performance of PSCs, and it is believed that the present work will facilitate transition of perovskite photovoltaics in flexible and tandem devices since the annealing- and antisolvent-free technology.

AB - Even though ZnO is commonly used as the ETL in the perovskite solar cell (PSC), the reactivity of perovskite deposited thereupon limits its performance. Herein, an ethylene diamine tetraacetic acid-complexed ZnO (E-ZnO) is successfully developed as a significantly improved electron selective layer (ESLs) in perovskite device. It is found that E-ZnO exhibits higher electron mobility and better matched energy level with perovskite compared to ZnO. In addition, in order to eliminate the proton transfer reaction at the ZnO/perovskite interface, a high quality perovskite film fabrication process that requires neither annealing nor antisolvent is developed. By taking advantages of both E-ZnO and the new process, the highest efficiency of 20.39% is obtained for PSCs based on E-ZnO. Moreover, the efficiency of unencapsulated PSCs with E-ZnO retains 95% of its initial value exposed in an ambient atmosphere after 3604 h. This work provides a feasible path toward high performance of PSCs, and it is believed that the present work will facilitate transition of perovskite photovoltaics in flexible and tandem devices since the annealing- and antisolvent-free technology.

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Antisolvent- and Annealing-Free Deposition for Highly Stable Efficient Perovskite Solar Cells via Modified ZnO

Abstract

Bibliographical note

Keywords

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UN SDGs

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