Anomalous Temperature Dependence in Metal-Black Phosphorus Contact

Xuefei Li, Roberto Grassi, Sichao Li, Tiaoyang Li, Xiong Xiong, Tony Low, Yanqing Wu

Research output: Contribution to journalArticle

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Abstract

Metal-semiconductor contact has been the performance limiting problem for electronic devices and also dictates the scaling potential for future generation devices based on novel channel materials. Two-dimensional semiconductors beyond graphene, particularly few layer black phosphorus, have attracted much attention due to their exceptional electronic properties such as anisotropy and high mobility. However, due to its ultrathin body nature, few layer black phosphorus-metal contact behaves differently than conventional Schottky barrier (SB) junctions, and the mechanisms of its carrier transport across such a barrier remain elusive. In this work, we examine the transport characteristic of metal-black phosphorus contact under varying temperature. We elucidated the origin of apparent negative SB heights extracted from classical thermionic emission model and also the phenomenon of metal-insulator transition observed in the current-temperature transistor characteristic. In essence, we found that the SB height can be modulated by the back-gate voltage, which beyond a certain critical point becomes so low that the injected carrier can no longer be described by the conventional thermionic emission theory. The transition from transport dominated by a Maxwell-Boltzmann distribution for the high energy tail states, to that of a Fermi distribution by low energy Fermi sea electrons, is the physical origin of the observed metal-insulator transition. We identified two distinctive tunneling limited transport regimes in the contact: vertical and longitudinal tunneling.

LanguageEnglish (US)
Pages26-31
Number of pages6
JournalNano Letters
Volume18
Issue number1
DOIs
StatePublished - Jan 10 2018

Fingerprint

Semiconductor insulator boundaries
Metal insulator boundaries
Thermionic emission
Schottky barrier diodes
Boltzmann equation
thermionic emission
Contact resistance
Semiconductor devices
Schottky diodes
contact resistance
semiconductor devices
Electronic properties
Graphene
phosphorus
Phosphorus
graphene
Temperature distribution
Metal insulator transition
temperature distribution
temperature dependence

Keywords

  • Black phosphorus
  • contact resistance
  • metallic-insulator transition
  • Schottky barrier

PubMed: MeSH publication types

  • Journal Article

Cite this

Li, X., Grassi, R., Li, S., Li, T., Xiong, X., Low, T., & Wu, Y. (2018). Anomalous Temperature Dependence in Metal-Black Phosphorus Contact. Nano Letters, 18(1), 26-31. DOI: 10.1021/acs.nanolett.7b02278

Anomalous Temperature Dependence in Metal-Black Phosphorus Contact. / Li, Xuefei; Grassi, Roberto; Li, Sichao; Li, Tiaoyang; Xiong, Xiong; Low, Tony; Wu, Yanqing.

In: Nano Letters, Vol. 18, No. 1, 10.01.2018, p. 26-31.

Research output: Contribution to journalArticle

Li, X, Grassi, R, Li, S, Li, T, Xiong, X, Low, T & Wu, Y 2018, 'Anomalous Temperature Dependence in Metal-Black Phosphorus Contact' Nano Letters, vol. 18, no. 1, pp. 26-31. DOI: 10.1021/acs.nanolett.7b02278
Li X, Grassi R, Li S, Li T, Xiong X, Low T et al. Anomalous Temperature Dependence in Metal-Black Phosphorus Contact. Nano Letters. 2018 Jan 10;18(1):26-31. Available from, DOI: 10.1021/acs.nanolett.7b02278
Li, Xuefei ; Grassi, Roberto ; Li, Sichao ; Li, Tiaoyang ; Xiong, Xiong ; Low, Tony ; Wu, Yanqing. / Anomalous Temperature Dependence in Metal-Black Phosphorus Contact. In: Nano Letters. 2018 ; Vol. 18, No. 1. pp. 26-31
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