Annealing Temperature Effects on Spin Hall Magnetoresistance in Perpendicularly Magnetized W/CoFeB Bilayers

Thomas J. Peterson, Protyush Sahu, Delin Zhang, Mahendra Dc, Jian Ping Wang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


In this paper, we studied the annealing temperature effects on the spin Hall magnetoresistance (SMR) in W/CoFeB metallic bilayer systems. The bilayers were deposited using dc magnetron sputtering. The angle-dependent magnetoresistance was performed in a field of 8 T. The sample was rotated in the yz plane to isolate the SMR signal from the anisotropic magnetoresistance present in metallic systems. For annealing temperatures above 350 °C, we found the SMR signal reduces with an increase in annealing temperature. By measuring the SMR for samples with a varying W layer thickness we were able to find that the spin Hall angle decreases as annealing temperature increases and the spin diffusion length for W remains almost constant with annealing temperature.

Original languageEnglish (US)
Article number4100204
JournalIEEE Transactions on Magnetics
Issue number2
StatePublished - Feb 2019

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This work was supported in part by ASCENT, one of six centers in JUMP, in part by a Semiconductor Research Corporation Program sponsored by DARPA, in part by CSPIN, a MARCO/DARPA STARnet Center, in part by the National Science Foundation under the Scalable Parallelism in the Extreme Grant.

Publisher Copyright:
© 1965-2012 IEEE.

Copyright 2019 Elsevier B.V., All rights reserved.


  • Annealed W/CoFeB
  • annealing effects
  • spin Hall angle (SHA)
  • spin Hall magnetoresistance (SMR)

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