Annealing Temperature Effects on Spin Hall Magnetoresistance in Perpendicularly Magnetized W/CoFeB Bilayers

Thomas J. Peterson, Protyush Sahu, Delin Zhang, Mahendra Dc, Jian Ping Wang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this paper, we studied the annealing temperature effects on the spin Hall magnetoresistance (SMR) in W/CoFeB metallic bilayer systems. The bilayers were deposited using dc magnetron sputtering. The angle-dependent magnetoresistance was performed in a field of 8 T. The sample was rotated in the yz plane to isolate the SMR signal from the anisotropic magnetoresistance present in metallic systems. For annealing temperatures above 350 °C, we found the SMR signal reduces with an increase in annealing temperature. By measuring the SMR for samples with a varying W layer thickness we were able to find that the spin Hall angle decreases as annealing temperature increases and the spin diffusion length for W remains almost constant with annealing temperature.

Original languageEnglish (US)
Article number4100204
JournalIEEE Transactions on Magnetics
Volume55
Issue number2
DOIs
StatePublished - Feb 2019

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Magnetoresistance
Thermal effects
Annealing
Enhanced magnetoresistance
Temperature
Magnetron sputtering

Keywords

  • Annealed W/CoFeB
  • annealing effects
  • spin Hall angle (SHA)
  • spin Hall magnetoresistance (SMR)

Cite this

Annealing Temperature Effects on Spin Hall Magnetoresistance in Perpendicularly Magnetized W/CoFeB Bilayers. / Peterson, Thomas J.; Sahu, Protyush; Zhang, Delin; Dc, Mahendra; Wang, Jian Ping.

In: IEEE Transactions on Magnetics, Vol. 55, No. 2, 4100204, 02.2019.

Research output: Contribution to journalArticle

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