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Anisotropic growth processes on gaas(Loo) and ge(100)
P. R. Pukite, S. Batra, P. I. Cohen
Electrical and Computer Engineering
Research output
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Contribution to journal
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Article
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peer-review
6
Scopus citations
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Keyphrases
Oscillation
100%
Growth Process
100%
Gallium Arsenide
100%
Reflection High-energy Electron Diffraction
100%
Anisotropic Growth
100%
Ge(001)
100%
Electron Beam
33%
Anisotropy
33%
Molecular Beam Epitaxy
33%
Kink
33%
Simple System
33%
Diffraction Pattern
33%
Wide Temperature Range
33%
GaAs(100)
33%
Misoriented
33%
Misorientation
33%
Strong Anisotropy
33%
System Growth
33%
Anisotropic Characteristics
33%
Substrate Misorientation
33%
Ge(100) Surface
33%
Material Science
Reflection High-Energy Electron Diffraction
100%
Anisotropy
66%
Gallium Arsenide
66%
Surface (Surface Science)
66%
Density
33%
Molecular Beam Epitaxy
33%
Diffraction Pattern
33%
Nucleation
33%
Physics
High Energy Electron
100%
Electron Diffraction
100%
Anisotropy
66%
Nucleation
33%
Diffraction Pattern
33%
Molecular Beam Epitaxy
33%
Electron Beam
33%
Earth and Planetary Sciences
High Energy Electron
100%
Electron Diffraction
100%
Nucleation
33%
Electron Beam
33%
Diffraction Pattern
33%
Molecular Beam Epitaxy
33%