We have used reflection high energy electron diffraction (RHEED) to follow the growth of GaAs on misoriented GaAs(100), using molecular beam epitaxy (MBE). We find anisotropies in the step order, kink density and the growth oscillations as a function of substrate misorientation and direction of surface misorientation. For comparison in a simple system, growth of Ge on Ge(100) is also followed. On the singular Ge(100) surface, we observe strong RHEED oscillations accompanied by a strong anisotropy in the nucleation of the islands during growth. These islands show up as long intersecting streaks in the diffraction pattern when the electron beam is incident along the  direction. In the presence of AS4, these anisotropic features become more striking and stronger RHEED oscillations are observed over a wider temperature range.
|Original language||English (US)|
|Number of pages||5|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - Apr 20 1987|
Bibliographical noteFunding Information:
This work was supported by the National Science Foundation (DMR 8615207) and the Minnesota center for Microelectronics and Information Sciences