Anisotropic growth processes on gaas(Loo) and ge(100)

P. R. Pukite, S. Batra, P. I. Cohen

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


We have used reflection high energy electron diffraction (RHEED) to follow the growth of GaAs on misoriented GaAs(100), using molecular beam epitaxy (MBE). We find anisotropies in the step order, kink density and the growth oscillations as a function of substrate misorientation and direction of surface misorientation. For comparison in a simple system, growth of Ge on Ge(100) is also followed. On the singular Ge(100) surface, we observe strong RHEED oscillations accompanied by a strong anisotropy in the nucleation of the islands during growth. These islands show up as long intersecting streaks in the diffraction pattern when the electron beam is incident along the [010] direction. In the presence of AS4, these anisotropic features become more striking and stronger RHEED oscillations are observed over a wider temperature range.

Original languageEnglish (US)
Pages (from-to)22-26
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - Apr 20 1987

Bibliographical note

Funding Information:
This work was supported by the National Science Foundation (DMR 8615207) and the Minnesota center for Microelectronics and Information Sciences


Dive into the research topics of 'Anisotropic growth processes on gaas(Loo) and ge(100)'. Together they form a unique fingerprint.

Cite this