Analyzing the Impact of FinFET Self-Heating on the Performance of RF Power Amplifiers

Nibedita Karmokar, Sai Wang Tam, Thanh Viet Dinh, Vidya A Chhabria, Ramesh Harjani, Sachin S. Sapatnekar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In FinFET nodes, high transistor power densities in a power amplifier (PA) lead to device self-heating (SH), degrading performance. This study investigates the impact of SH in large PA FinFET arrays. An encoder-decoder network, together with a long short-term memory model, is used for rapid and accurate thermal analysis. This fast analyzer helps better explore design optimizations than conventional computationally-expensive thermal solvers. The work explores methods for mitigating thermal effects in PAs by inserting dummy transistors within the array of active FinFET devices, and shows the impact of duty cycle and frequency on PA performance.

Original languageEnglish (US)
Title of host publicationProceedings of the 43rd IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798400710773
DOIs
StatePublished - Apr 9 2025
Event43rd International Conference on Computer-Aided Design, ICCAD 2024 - New York, United States
Duration: Oct 27 2024Oct 31 2024

Publication series

NameIEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
ISSN (Print)1092-3152

Conference

Conference43rd International Conference on Computer-Aided Design, ICCAD 2024
Country/TerritoryUnited States
CityNew York
Period10/27/2410/31/24

Bibliographical note

Publisher Copyright:
© 2024 Copyright is held by the owner/author(s).

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