This article presents a method for analyzing the parasitic effects of interconnects on the performance of the STT-MTJ-based computational random access memory (CRAM) in-memory computation platform. The CRAM is a platform that makes a small reconfiguration to a standard spintronics-based memory array to enable logic operations within the array. The analytical method in this article develops a methodology that quantifies the way in which wire parasitics limit the size and configuration of a CRAM array and studies the impact of cell- and array-level design choices on the CRAM noise margin. Finally, the method determines the maximum allowable CRAM array size under various technology considerations.
|Original language||English (US)|
|Number of pages||9|
|Journal||IEEE Journal on Exploratory Solid-State Computational Devices and Circuits|
|State||Published - Jun 2020|
Bibliographical noteFunding Information:
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA CORRESPONDING AUTHOR: M. ZABIHI (email@example.com) This work was supported in part by NSF SPXunder Award CCF-1725420. This article has supplementary downloadable material available at http://ieeexplore.ieee.org, provided by the authors.
© 2014 IEEE.
- In-memory computing
- spin-transfer torque computational random access memory (STT-CRAM)