@inproceedings{d9bcb96391a74e988f8d7904db905d92,
title = "Analytic potential model for asymmetricunderlap gate-all-around MOSFET",
abstract = "An analytic potential model for undoped cylindrical gate-all-around (GAA) MOSFET with asymmetric gate underlap is developed in this paper. This model is derived by solving the Poisson's equation with the parabolic potential approximation, channel length transformation and conformai mapping. The analytic body center potential solution is presented. Compared with TCAD simulations, the proposed model shows good agreements, with different dimensions of the structure and varied bias conditions. The model here is appropriate for predicting the effect of gate misalignment or asymmetric gate underlap in GAA MOSFETs' design.",
keywords = "Asymmetric, Gale-all-around, Misalinment, Underlap",
author = "Shaodi Wang and Xinjie Guo and Lining Zhang and Chenfei Zhang and Zhiwei Liu and Guozeng Wang and Yang Zhang and Wen Wu and Xiaojin Zhao and Wenping Wang and Yu Cao and Yun Ye and Ruonan Wang and Yong Ma and Jin He",
year = "2011",
language = "English (US)",
isbn = "9781439871393",
series = "Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011",
pages = "776--779",
booktitle = "Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011",
note = "Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 ; Conference date: 13-06-2011 Through 16-06-2011",
}