Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs

Sang Hyun Oh, Don Monroe, J. M. Hergenrother

Research output: Contribution to journalArticlepeer-review

176 Scopus citations

Abstract

Short-channel effects in fully-depleted double-gate (DG) and cylindrical, surrounding-gate (Cyl) MOSFETs are governed by the electrostatic potential as confined by the gates, and thus by the device dimensions. The simple but powerful evanescent-mode analysis shows that the length λ, over which the source and drain perturb the channel potential, is 1/π of the effective device thickness in the double-gate case, and 1/4.810 of the effective diameter in the cylindrical case, in excellent agreement with PADRE device simulations. Thus for equivalent silicon and gate oxide thicknesses, evanescent-mode analysis indicates that Cyl-MOSFETs can be scaled to 35% shorter channel lengths than DG-MOSFETs.

Original languageEnglish (US)
Pages (from-to)445-447
Number of pages3
JournalIEEE Electron Device Letters
Volume21
Issue number9
DOIs
StatePublished - Sep 2000

Keywords

  • Double-gate MOSFET
  • MOSFET scaling
  • short-channel effect
  • surrounding-gate MOSFET

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