Analysis of oxide bulk trapped charge distribution and densities from photo injection characteristics of oxide-nitride-oxide (ONO) structures

Woong Lee; Dae Han Yoo; Eun Young Lee; Jinkwon Bok; Youngwoo Hyung; Younghan Roh

doi:10.1109/ISDRS.2009.5378319

Analysis of oxide bulk trapped charge distribution and densities from photo injection characteristics of oxide-nitride-oxide (ONO) structures

Woong Lee
, Dae Han Yoo
, Eun Young Lee
, Jinkwon Bok
, Youngwoo Hyung
, Younghan Roh

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378319
State	Published - 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: Dec 9 2009 → Dec 11 2009

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	12/9/09 → 12/11/09

Publisher link

10.1109/ISDRS.2009.5378319

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Lee, W., Yoo, D. H., Lee, E. Y., Bok, J., Hyung, Y., & Roh, Y. (2009). Analysis of oxide bulk trapped charge distribution and densities from photo injection characteristics of oxide-nitride-oxide (ONO) structures. In 2009 International Semiconductor Device Research Symposium, ISDRS '09 Article 5378319 (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378319

Analysis of oxide bulk trapped charge distribution and densities from photo injection characteristics of oxide-nitride-oxide (ONO) structures. / Lee, Woong; Yoo, Dae Han; Lee, Eun Young et al.
2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378319 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, W, Yoo, DH, Lee, EY, Bok, J, Hyung, Y & Roh, Y 2009, Analysis of oxide bulk trapped charge distribution and densities from photo injection characteristics of oxide-nitride-oxide (ONO) structures. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378319, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 12/9/09. https://doi.org/10.1109/ISDRS.2009.5378319

Lee W, Yoo DH, Lee EY, Bok J, Hyung Y, Roh Y. Analysis of oxide bulk trapped charge distribution and densities from photo injection characteristics of oxide-nitride-oxide (ONO) structures. In 2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378319. (2009 International Semiconductor Device Research Symposium, ISDRS '09). doi: 10.1109/ISDRS.2009.5378319

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title = "Analysis of oxide bulk trapped charge distribution and densities from photo injection characteristics of oxide-nitride-oxide (ONO) structures",

author = "Woong Lee and Yoo, \{Dae Han\} and Lee, \{Eun Young\} and Jinkwon Bok and Youngwoo Hyung and Younghan Roh",

year = "2009",

doi = "10.1109/ISDRS.2009.5378319",

language = "English (US)",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

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AU - Lee, Woong

AU - Yoo, Dae Han

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AU - Bok, Jinkwon

AU - Hyung, Youngwoo

AU - Roh, Younghan

PY - 2009

Y1 - 2009

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U2 - 10.1109/ISDRS.2009.5378319

DO - 10.1109/ISDRS.2009.5378319

M3 - Conference contribution

AN - SCOPUS:77949346573

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009

ER -

Analysis of oxide bulk trapped charge distribution and densities from photo injection characteristics of oxide-nitride-oxide (ONO) structures

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