Analysis of oxide bulk trapped charge distribution and densities from photo injection characteristics of oxide-nitride-oxide (ONO) structures

Woong Lee; Dae Han Yoo; Eun Young Lee; Jinkwon Bok; Youngwoo Hyung; Younghan Roh

doi:10.1109/ISDRS.2009.5378319

Analysis of oxide bulk trapped charge distribution and densities from photo injection characteristics of oxide-nitride-oxide (ONO) structures

Woong Lee, Dae Han Yoo, Eun Young Lee, Jinkwon Bok, Youngwoo Hyung, Younghan Roh

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378319
State	Published - 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: Dec 9 2009 → Dec 11 2009

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country	United States
City	College Park, MD
Period	12/9/09 → 12/11/09

Access

10.1109/ISDRS.2009.5378319

Cite this

Lee, W., Yoo, D. H., Lee, E. Y., Bok, J., Hyung, Y., & Roh, Y. (2009). Analysis of oxide bulk trapped charge distribution and densities from photo injection characteristics of oxide-nitride-oxide (ONO) structures. In 2009 International Semiconductor Device Research Symposium, ISDRS '09 [5378319] (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378319

Analysis of oxide bulk trapped charge distribution and densities from photo injection characteristics of oxide-nitride-oxide (ONO) structures. / Lee, Woong; Yoo, Dae Han; Lee, Eun Young; Bok, Jinkwon; Hyung, Youngwoo; Roh, Younghan.

2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378319 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, W, Yoo, DH, Lee, EY, Bok, J, Hyung, Y & Roh, Y 2009, Analysis of oxide bulk trapped charge distribution and densities from photo injection characteristics of oxide-nitride-oxide (ONO) structures. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378319, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 12/9/09. https://doi.org/10.1109/ISDRS.2009.5378319

Lee W, Yoo DH, Lee EY, Bok J, Hyung Y, Roh Y. Analysis of oxide bulk trapped charge distribution and densities from photo injection characteristics of oxide-nitride-oxide (ONO) structures. In 2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378319. (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378319

Lee, Woong ; Yoo, Dae Han ; Lee, Eun Young ; Bok, Jinkwon ; Hyung, Youngwoo ; Roh, Younghan. / Analysis of oxide bulk trapped charge distribution and densities from photo injection characteristics of oxide-nitride-oxide (ONO) structures. 2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. (2009 International Semiconductor Device Research Symposium, ISDRS '09).

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