Analysis of Neutron-Induced Multibit-Upset Clusters in a 14-nm Flip-Flop Array

Saurabh Kumar, Minki Cho, Luke Everson, Qianying Tang, Pascal Meinerzhagen, Andres Malavasi, Dan Lake, Carlos Tokunaga, Muhammad Khellah, James Tschanz, Vivek De, Chris H. Kim

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We report a detailed analysis of neutron-induced multibit-upset (MBU) clusters measured from flip-flop arrays implemented in a 14-nm trigate CMOS. Depending on the strike location, charge collection efficiency, and circuit topology, the MBU clusters are characterized in terms of size and span, and a qualitative first-order analysis has been presented. A novel MBU analysis framework has been demonstrated that uses a weighted sliding window to characterize MBU clusters efficiently and accurately with minimal double-counting or mischaracterization of cluster size. To further explain the relative MBU cross sections, the unique MBU patterns extracted from measured data have been studied and analyzed to find layout dependencies. The results show the strong correlation between the internode proximity and MBUs. The analysis shows a higher soft error rate (SER) cross section for smaller MBU cluster size and smaller span while the bigger clusters have lower contribution toward overall MBU SER.

Original languageEnglish (US)
Article number8692625
Pages (from-to)918-925
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume66
Issue number6
DOIs
StatePublished - Jun 2019

Bibliographical note

Funding Information:
Manuscript received January 17, 2019; revised March 1, 2019; accepted April 1, 2019. Date of publication April 16, 2019; date of current version June 14, 2019. This work was supported in part by the Defense Threat Reduction Agency under Basic Research Award under Grant HDTRA1-14-1-0042 and in part by the U.S. Government.

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

  • FinFET
  • multibit upset (MBU)
  • radiation effects
  • reliability
  • soft error

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