Abstract
Secondary ion mass spectroscopy (SIMS) was used to investigate carbon impurity concentrations in stoichiometric SrTiO3 films grown by a hybrid molecular beam epitaxy approach that uses an effusion cell to supply strontium, a rf plasma source for oxygen and a metal organic titanium source (titanium tetra isopropoxide). The carbon concentration in the films was measured as a function of growth parameters. At sufficiently high growth temperatures (>800 °C), the films contain a few ppm of carbon. The challenges in accurately quantifying low carbon concentrations are discussed. A carbon-containing contamination layer is detected on the surfaces of SrTiO 3 substrates and air-exposed films by SIMS and in scanning transmission electron microscopy. The contamination layer could be removed by high-temperature predeposition oxygen plasma cleaning.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1365-1368 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 27 |
| Issue number | 6 |
| DOIs | |
| State | Published - 2009 |
Bibliographical note
Funding Information:This research was supported by the National Science Foundation through the UCSB MRL (Award No. DMR 05-20415). Acquisition of the oxide MBE system was made possible through a NSF MRI grant (NSF Grant No. DMR-0619698).
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