An on-die CMOS leakage current sensor for measuring process variation in sub-90nm generations

Chris H. Kim; Kaushik Roy; Steven Hsu; Ram K. Krishnamurthy; Shekhar Borkar

An on-die CMOS leakage current sensor for measuring process variation in sub-90nm generations

Chris H. Kim, Kaushik Roy, Steven Hsu, Ram K. Krishnamurthy, Shekhar Borkar

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

This paper describes an on-die leakage current sensor in 1.2V, 90nm dual-V₁ CMOS technology for accurately measuring process variation. Results based on measured leakage data show (i) higher signal-to-noise ratio and (ii) reduced sensitivity to supply and P/N skew variations compared to prior designs.

Original language	English (US)
Title of host publication	2005 International Conference on Integrated Circuit Design and Technology, ICICDT
Pages	221-222
Number of pages	2
State	Published - Oct 10 2005
Event	2005 International Conference on Integrated Circuit Design and Technology, ICICDT - Austin, TX, United States Duration: May 9 2005 → May 11 2005

Other

Other	2005 International Conference on Integrated Circuit Design and Technology, ICICDT
Country/Territory	United States
City	Austin, TX
Period	5/9/05 → 5/11/05

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Kim, CH, Roy, K, Hsu, S, Krishnamurthy, RK & Borkar, S 2005, An on-die CMOS leakage current sensor for measuring process variation in sub-90nm generations. in 2005 International Conference on Integrated Circuit Design and Technology, ICICDT. pp. 221-222, 2005 International Conference on Integrated Circuit Design and Technology, ICICDT, Austin, TX, United States, 5/9/05.

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title = "An on-die CMOS leakage current sensor for measuring process variation in sub-90nm generations",

abstract = "This paper describes an on-die leakage current sensor in 1.2V, 90nm dual-V1 CMOS technology for accurately measuring process variation. Results based on measured leakage data show (i) higher signal-to-noise ratio and (ii) reduced sensitivity to supply and P/N skew variations compared to prior designs.",

author = "Kim, \{Chris H.\} and Kaushik Roy and Steven Hsu and Krishnamurthy, \{Ram K.\} and Shekhar Borkar",

year = "2005",

month = oct,

day = "10",

language = "English (US)",

isbn = "0780390814",

pages = "221--222",

booktitle = "2005 International Conference on Integrated Circuit Design and Technology, ICICDT",

note = "2005 International Conference on Integrated Circuit Design and Technology, ICICDT ; Conference date: 09-05-2005 Through 11-05-2005",

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T1 - An on-die CMOS leakage current sensor for measuring process variation in sub-90nm generations

AU - Kim, Chris H.

AU - Roy, Kaushik

AU - Hsu, Steven

AU - Krishnamurthy, Ram K.

AU - Borkar, Shekhar

PY - 2005/10/10

Y1 - 2005/10/10

N2 - This paper describes an on-die leakage current sensor in 1.2V, 90nm dual-V1 CMOS technology for accurately measuring process variation. Results based on measured leakage data show (i) higher signal-to-noise ratio and (ii) reduced sensitivity to supply and P/N skew variations compared to prior designs.

AB - This paper describes an on-die leakage current sensor in 1.2V, 90nm dual-V1 CMOS technology for accurately measuring process variation. Results based on measured leakage data show (i) higher signal-to-noise ratio and (ii) reduced sensitivity to supply and P/N skew variations compared to prior designs.

UR - https://www.scopus.com/pages/publications/25844460067

UR - https://www.scopus.com/inward/citedby.url?scp=25844460067&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:25844460067

SN - 0780390814

SP - 221

EP - 222

BT - 2005 International Conference on Integrated Circuit Design and Technology, ICICDT

T2 - 2005 International Conference on Integrated Circuit Design and Technology, ICICDT

Y2 - 9 May 2005 through 11 May 2005

ER -

An on-die CMOS leakage current sensor for measuring process variation in sub-90nm generations

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