An on-die CMOS leakage current sensor for measuring process variation in sub-90nm generations

Chris H. Kim, Kaushik Roy, Steven Hsu, Ram K. Krishnamurthy, Shekhar Borkar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

This paper describes an on-die leakage current sensor in 1.2V, 90nm dual-V1 CMOS technology for accurately measuring process variation. Results based on measured leakage data show (i) higher signal-to-noise ratio and (ii) reduced sensitivity to supply and P/N skew variations compared to prior designs.

Original languageEnglish (US)
Title of host publication2005 International Conference on Integrated Circuit Design and Technology, ICICDT
Pages221-222
Number of pages2
StatePublished - Oct 10 2005
Event2005 International Conference on Integrated Circuit Design and Technology, ICICDT - Austin, TX, United States
Duration: May 9 2005May 11 2005

Other

Other2005 International Conference on Integrated Circuit Design and Technology, ICICDT
CountryUnited States
CityAustin, TX
Period5/9/055/11/05

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