Abstract
This paper describes an on-die leakage current sensor in 1.2V, 90nm CMOS technology for accurately measuring process variation. Results based on measured leakage data show (i) higher signal-to-noise ratio and (ii) reduced sensitivity to supply and P/N skew variations compared to prior designs, while the proposed sensor only requires a single bias generator even for multi-bit resolution sensing. A 6-channel leakage current monitor testchip fabricated in 90nm dual-Vt CMOS is also described.
Original language | English (US) |
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Title of host publication | 2004 Symposium on VLSI Circuits, Digest of Technical Papers, 2004 VLSI |
Pages | 250-251 |
Number of pages | 2 |
Edition | CIRCUITS SYMP. |
State | Published - Sep 29 2004 |
Event | 2004 Symposium on VLSI Circuits, Digest of Technical Papers, 2004 VLSI - Honolulu, HI, United States Duration: Jun 17 2004 → Jun 19 2004 |
Other
Other | 2004 Symposium on VLSI Circuits, Digest of Technical Papers, 2004 VLSI |
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Country/Territory | United States |
City | Honolulu, HI |
Period | 6/17/04 → 6/19/04 |