An ISM band CMOS integrated transceiver design for wireless telemetry system

J. Kim; R. Harjani

An ISM band CMOS integrated transceiver design for wireless telemetry system

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

This paper presents an ISM band CMOS integrated wireless telemetry transceiver. It is composed of the receiver, the transmitter, and the interface circuit. It was fabricated with 0.18μ copper CMOS process by UMC. The DC coupling method is applied in the receiver path to cancel DC offset components. The receiver sensitivity is minimum -95dBm to detect the data within 0.1% BER. It is consumed below 50mW overall power with sleep mode function. It works up to 200Kb/s data rate. The final amplifier has maximum 15dBm output power with 40% efficiency. The dynamic power control range has minimum 15dB and the communication distance is within 1 Km.

Original language	English (US)
Pages (from-to)	IV694-IV697
Journal	Materials Research Society Symposium - Proceedings
Volume	626
State	Published - Jan 1 2001
Event	Thermoelectric Materials 2000-The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications - San Francisco, CA, United States Duration: Apr 24 2000 → Apr 27 2000

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title = "An ISM band CMOS integrated transceiver design for wireless telemetry system",

abstract = "This paper presents an ISM band CMOS integrated wireless telemetry transceiver. It is composed of the receiver, the transmitter, and the interface circuit. It was fabricated with 0.18μ copper CMOS process by UMC. The DC coupling method is applied in the receiver path to cancel DC offset components. The receiver sensitivity is minimum -95dBm to detect the data within 0.1% BER. It is consumed below 50mW overall power with sleep mode function. It works up to 200Kb/s data rate. The final amplifier has maximum 15dBm output power with 40% efficiency. The dynamic power control range has minimum 15dB and the communication distance is within 1 Km.",

author = "J. Kim and R. Harjani",

year = "2001",

month = jan,

day = "1",

language = "English (US)",

volume = "626",

pages = "IV694--IV697",

journal = "Materials Research Society Symposium - Proceedings",

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publisher = "Materials Research Society",

note = "Thermoelectric Materials 2000-The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications ; Conference date: 24-04-2000 Through 27-04-2000",

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T1 - An ISM band CMOS integrated transceiver design for wireless telemetry system

AU - Kim, J.

AU - Harjani, R.

PY - 2001/1/1

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N2 - This paper presents an ISM band CMOS integrated wireless telemetry transceiver. It is composed of the receiver, the transmitter, and the interface circuit. It was fabricated with 0.18μ copper CMOS process by UMC. The DC coupling method is applied in the receiver path to cancel DC offset components. The receiver sensitivity is minimum -95dBm to detect the data within 0.1% BER. It is consumed below 50mW overall power with sleep mode function. It works up to 200Kb/s data rate. The final amplifier has maximum 15dBm output power with 40% efficiency. The dynamic power control range has minimum 15dB and the communication distance is within 1 Km.

AB - This paper presents an ISM band CMOS integrated wireless telemetry transceiver. It is composed of the receiver, the transmitter, and the interface circuit. It was fabricated with 0.18μ copper CMOS process by UMC. The DC coupling method is applied in the receiver path to cancel DC offset components. The receiver sensitivity is minimum -95dBm to detect the data within 0.1% BER. It is consumed below 50mW overall power with sleep mode function. It works up to 200Kb/s data rate. The final amplifier has maximum 15dBm output power with 40% efficiency. The dynamic power control range has minimum 15dB and the communication distance is within 1 Km.

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M3 - Conference article

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SP - IV694-IV697

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Thermoelectric Materials 2000-The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications

Y2 - 24 April 2000 through 27 April 2000

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