An investigation of fT and fmax degradation due to device interconnects in 0.5 THz SiGe HBT technology

A. Cagri Ulusoy; Robert L. Schmid; Saeed Zeinolabedinzadeh; Wasif T. Khan; Mehmet Kaynak; Bernd Tillack; John D. Cressler

doi:10.1109/BCTM.2014.6981317

An investigation of f_T and f_max degradation due to device interconnects in 0.5 THz SiGe HBT technology

A. Cagri Ulusoy
, Robert L. Schmid
, Saeed Zeinolabedinzadeh
, Wasif T. Khan
, Mehmet Kaynak
, Bernd Tillack
, John D. Cressler

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Scopus citations

Abstract

In this paper, the authors investigate the impact of device interconnect parasitics on the two most commonly-accepted RF small-signal figures-of-merit, the transit frequency (f_T) and the maximum frequency of oscillation (f_max) in state-of-the-art SiGe HBT technology. Simulations and measurement results are provided as a guideline to design an optimum device interconnect scheme to achieve a high f_max. Test structures were characterized with de-embedding structures providing reference planes at the device level and at the top-metal level. Measurements show an f_max of 450 GHz at the device level and at the top-metal level a degradation of only 4% to 430 GHz. These results demonstrate a significant advantage of the SiGe HBT technology compared to ultra-scaled CMOS technology at device speeds approaching a terahertz, and to the best of the authors' knowledge, demonstrate the highest f_max reported at the top-metal level in any state-of-the-art silicon technology.

Original language	English (US)
Title of host publication	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	211-214
Number of pages	4
ISBN (Electronic)	9781479972302
DOIs	https://doi.org/10.1109/BCTM.2014.6981317
State	Published - Dec 9 2014
Externally published	Yes
Event	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014 - Coronado, United States Duration: Sep 28 2014 → Oct 1 2014

Publication series

Name	Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)	1088-9299

Conference

Conference	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014
Country/Territory	United States
City	Coronado
Period	9/28/14 → 10/1/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Publisher link

10.1109/BCTM.2014.6981317

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Cite this

Ulusoy, A. C., Schmid, R. L., Zeinolabedinzadeh, S., Khan, W. T., Kaynak, M., Tillack, B., & Cressler, J. D. (2014). An investigation of f_T and f_max degradation due to device interconnects in 0.5 THz SiGe HBT technology. In 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014 (pp. 211-214). Article 6981317 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCTM.2014.6981317

An investigation of f_T and f_max degradation due to device interconnects in 0.5 THz SiGe HBT technology. / Ulusoy, A. Cagri; Schmid, Robert L.; Zeinolabedinzadeh, Saeed et al.
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 211-214 6981317 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ulusoy, AC, Schmid, RL, Zeinolabedinzadeh, S, Khan, WT, Kaynak, M, Tillack, B & Cressler, JD 2014, An investigation of f_T and f_max degradation due to device interconnects in 0.5 THz SiGe HBT technology. in 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014., 6981317, Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Institute of Electrical and Electronics Engineers Inc., pp. 211-214, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014, Coronado, United States, 9/28/14. https://doi.org/10.1109/BCTM.2014.6981317

Ulusoy AC, Schmid RL, Zeinolabedinzadeh S, Khan WT, Kaynak M, Tillack B et al. An investigation of f_T and f_max degradation due to device interconnects in 0.5 THz SiGe HBT technology. In 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 211-214. 6981317. (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). doi: 10.1109/BCTM.2014.6981317

Ulusoy, A. Cagri ; Schmid, Robert L. ; Zeinolabedinzadeh, Saeed et al. / An investigation of f_T and f_max degradation due to device interconnects in 0.5 THz SiGe HBT technology. 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 211-214 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).

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abstract = "In this paper, the authors investigate the impact of device interconnect parasitics on the two most commonly-accepted RF small-signal figures-of-merit, the transit frequency (fT) and the maximum frequency of oscillation (fmax) in state-of-the-art SiGe HBT technology. Simulations and measurement results are provided as a guideline to design an optimum device interconnect scheme to achieve a high fmax. Test structures were characterized with de-embedding structures providing reference planes at the device level and at the top-metal level. Measurements show an fmax of 450 GHz at the device level and at the top-metal level a degradation of only 4\% to 430 GHz. These results demonstrate a significant advantage of the SiGe HBT technology compared to ultra-scaled CMOS technology at device speeds approaching a terahertz, and to the best of the authors' knowledge, demonstrate the highest fmax reported at the top-metal level in any state-of-the-art silicon technology.",

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AU - Ulusoy, A. Cagri

AU - Schmid, Robert L.

AU - Zeinolabedinzadeh, Saeed

AU - Khan, Wasif T.

AU - Kaynak, Mehmet

AU - Tillack, Bernd

AU - Cressler, John D.

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AB - In this paper, the authors investigate the impact of device interconnect parasitics on the two most commonly-accepted RF small-signal figures-of-merit, the transit frequency (fT) and the maximum frequency of oscillation (fmax) in state-of-the-art SiGe HBT technology. Simulations and measurement results are provided as a guideline to design an optimum device interconnect scheme to achieve a high fmax. Test structures were characterized with de-embedding structures providing reference planes at the device level and at the top-metal level. Measurements show an fmax of 450 GHz at the device level and at the top-metal level a degradation of only 4% to 430 GHz. These results demonstrate a significant advantage of the SiGe HBT technology compared to ultra-scaled CMOS technology at device speeds approaching a terahertz, and to the best of the authors' knowledge, demonstrate the highest fmax reported at the top-metal level in any state-of-the-art silicon technology.

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