An Improved Model for the Slewing Behavior of Opamps

Feng Wang, Ramesh Harjani

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

A new time-domain model for the slewing behavior of two stage opamps is presented. This model includes the effects of the load capacitance, compensation capacitance, device sizes and the nonlinear behavior of the transistors during the slewing period. This model improves on the commonly used constant current models and allows for more predictable designs. The model shows good agreement with simulations. Circuit design results using the traditional and new improved models are presented.

Original languageEnglish (US)
Pages (from-to)679-681
Number of pages3
JournalIEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing
Volume42
Issue number10
DOIs
StatePublished - Oct 1995

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