An electron-microscopy study of the A15 Nb3Ge substrate interface

Ari Antonovsky, Louis E. Toth, Bradley Bradford, Allen M. Goldman

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Electron microscopy has been used to study very thin Nb-Ge films sputtered-deposited onto copper substrates. Micrographs and selected-area electron-diffraction patterns reveal an interface region between the substrate and the first A15 Nb3Ge to form. This interface consists of microcrystalline Nb-N-O and a two-phase region consisting of Nb-N-O grains and an unidentifiable tetragonal Nb-Ge phase. The A15 Nb3Ge grains which form later in the growth of the film exhibit the same grain size and shape as the Nb-N-O grains. From the results a model for the role of the interface in the initial formation of A15 Nb3Ge is proposed.

Original languageEnglish (US)
Pages (from-to)1111-1115
Number of pages5
JournalJournal of Applied Physics
Volume51
Issue number2
DOIs
StatePublished - Dec 1 1980

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