Electron microscopy has been used to study very thin Nb-Ge films sputtered-deposited onto copper substrates. Micrographs and selected-area electron-diffraction patterns reveal an interface region between the substrate and the first A15 Nb3Ge to form. This interface consists of microcrystalline Nb-N-O and a two-phase region consisting of Nb-N-O grains and an unidentifiable tetragonal Nb-Ge phase. The A15 Nb3Ge grains which form later in the growth of the film exhibit the same grain size and shape as the Nb-N-O grains. From the results a model for the role of the interface in the initial formation of A15 Nb3Ge is proposed.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Applied Physics|
|State||Published - 1980|