An all-in-one silicon odometer for separately monitoring HCI, BTI, and TDDB

John Keane, Devin Persaud, Chris H. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

An on-chip reliability monitor capable of separating the aging effects of HCI, BTI, and TDDB with sub-ps precision is presented. A pair of stressed ring oscillators is implemented in which one ages due to both BTI and HCI, while the other suffers from only BTI. Frequency degradation is monitored with a beat frequency detection system achieving sub-μs measurement times. Measurement results are presented from a 65nm test chip over a range of stress conditions.

Original languageEnglish (US)
Title of host publication2009 Symposium on VLSI Circuits
Pages108-109
Number of pages2
StatePublished - Nov 18 2009
Event2009 Symposium on VLSI Circuits - Kyoto, Japan
Duration: Jun 16 2009Jun 18 2009

Publication series

NameIEEE Symposium on VLSI Circuits, Digest of Technical Papers

Other

Other2009 Symposium on VLSI Circuits
CountryJapan
CityKyoto
Period6/16/096/18/09

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    Keane, J., Persaud, D., & Kim, C. H. (2009). An all-in-one silicon odometer for separately monitoring HCI, BTI, and TDDB. In 2009 Symposium on VLSI Circuits (pp. 108-109). [5205408] (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).