An all-gas-phase approach for the fabrication of silicon nanocrystal light-emitting devices

Rebecca J. Anthony, Kai Yuan Cheng, Zachary C. Holman, Russell J. Holmes, Uwe R. Kortshagen

Research output: Contribution to journalArticlepeer-review

65 Scopus citations

Abstract

We present an all-gas-phase approach for the fabrication of nanocrystal-based light-emitting devices. In a single reactor, silicon nanocrystals are synthesized, surface-functionalized, and deposited onto substrates precoated with a transparent electrode. Devices are completed by evaporation of a top metal electrode. The devices exhibit electroluminescence centered at a wavelength of λ = 836 nm with a peak external quantum efficiency exceeding 0.02%. This all-gas-phase approach permits controlled deposition of dense, functional nanocrystal films suitable for application in electronic devices.

Original languageEnglish (US)
Pages (from-to)2822-2825
Number of pages4
JournalNano letters
Volume12
Issue number6
DOIs
StatePublished - Jun 13 2012

Keywords

  • Silicon
  • gas phase
  • light-emitting device
  • nanocrystals
  • plasma

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