Abstract
We present an all-gas-phase approach for the fabrication of nanocrystal-based light-emitting devices. In a single reactor, silicon nanocrystals are synthesized, surface-functionalized, and deposited onto substrates precoated with a transparent electrode. Devices are completed by evaporation of a top metal electrode. The devices exhibit electroluminescence centered at a wavelength of λ = 836 nm with a peak external quantum efficiency exceeding 0.02%. This all-gas-phase approach permits controlled deposition of dense, functional nanocrystal films suitable for application in electronic devices.
Original language | English (US) |
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Pages (from-to) | 2822-2825 |
Number of pages | 4 |
Journal | Nano letters |
Volume | 12 |
Issue number | 6 |
DOIs | |
State | Published - Jun 13 2012 |
Keywords
- Silicon
- gas phase
- light-emitting device
- nanocrystals
- plasma