An on-chip reliability monitor capable of characterizing all four bias temperature instability (BTI) modes is proposed. Stressed ring oscillators with independent dual power rails are implemented in which odd and even stages of an inverter chain are subject to different stress voltage configurations. A beat frequency detection technique with 3 reference ring oscillators achieves a frequency measurement resolution as low as 0.01% with a short measurement interruption time of 4μ s. Extensive BTI data collected from a 65nm ROSC array is presented for different stress conditions.
|Original language||English (US)|
|Title of host publication||2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|State||Published - Mar 2021|
|Event||2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Virtual, Monterey, United States|
Duration: Mar 21 2021 → Mar 24 2021
|Name||2021 IEEE International Reliability Physics Symposium (IRPS)|
|Conference||2021 IEEE International Reliability Physics Symposium, IRPS 2021|
|Period||3/21/21 → 3/24/21|
Bibliographical noteFunding Information:
ACKNOWLEDGMENT This work was supported in part by Semiconductor Research Corporation Task No. 2712.017 through the Texas Analog Center of Excellence (TxACE). The authors would also like to thank Drs. Vijay Reddy and Srikanth Krishnan at Texas Instruments for introducing PMOS PBTI issues to us and for the technical feedback and encouragement throughout the project.
© 2021 IEEE.
- Bias temperature instability (BTI)
- dual power rail
- ring oscillator array