An 8T Subthreshold SRAM Cell Utilizing Reverse Short Channel Effect for Write Margin and Read Performance Improvement

Tae Hyoung Kim; Jason Liu; Chris H. Kim

doi:10.1109/CICC.2007.4405723

An 8T Subthreshold SRAM Cell Utilizing Reverse Short Channel Effect for Write Margin and Read Performance Improvement

Tae Hyoung Kim
, Jason Liu
, Chris H. Kim

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

35 Scopus citations

Abstract

We propose a technique for improving write margin and read performance of 8T subthreshold SRAMs by using long channel devices to utilize the pronounced reverse short channel effect. Simulations show that the proposed cell at 0.2V has a write margin equivalent to a conventional cell at 0.27V. The Ion-to-Ioff ratio of the read path also improved from 169 to 271 and a 52% speedup for read was achieved. The cell area overhead was 20%.

Original language	English (US)
Title of host publication	Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, CICC 2007
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	241-244
Number of pages	4
ISBN (Electronic)	1424407869, 9781424407866
DOIs	https://doi.org/10.1109/CICC.2007.4405723
State	Published - 2007
Event	29th Annual IEEE Custom Integrated Circuits Conference, CICC 2007 - San Jose, United States Duration: Sep 16 2007 → Sep 19 2007

Publication series

Name	Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, CICC 2007

Conference

Conference	29th Annual IEEE Custom Integrated Circuits Conference, CICC 2007
Country/Territory	United States
City	San Jose
Period	9/16/07 → 9/19/07

Bibliographical note

Publisher Copyright:
© 2007 IEEE.

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10.1109/CICC.2007.4405723

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Kim, T. H., Liu, J., & Kim, C. H. (2007). An 8T Subthreshold SRAM Cell Utilizing Reverse Short Channel Effect for Write Margin and Read Performance Improvement. In Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, CICC 2007 (pp. 241-244). Article 4405723 (Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, CICC 2007). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CICC.2007.4405723

An 8T Subthreshold SRAM Cell Utilizing Reverse Short Channel Effect for Write Margin and Read Performance Improvement. / Kim, Tae Hyoung; Liu, Jason; Kim, Chris H.
Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, CICC 2007. Institute of Electrical and Electronics Engineers Inc., 2007. p. 241-244 4405723 (Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, CICC 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, TH, Liu, J & Kim, CH 2007, An 8T Subthreshold SRAM Cell Utilizing Reverse Short Channel Effect for Write Margin and Read Performance Improvement. in Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, CICC 2007., 4405723, Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, CICC 2007, Institute of Electrical and Electronics Engineers Inc., pp. 241-244, 29th Annual IEEE Custom Integrated Circuits Conference, CICC 2007, San Jose, United States, 9/16/07. https://doi.org/10.1109/CICC.2007.4405723

Kim TH, Liu J, Kim CH. An 8T Subthreshold SRAM Cell Utilizing Reverse Short Channel Effect for Write Margin and Read Performance Improvement. In Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, CICC 2007. Institute of Electrical and Electronics Engineers Inc. 2007. p. 241-244. 4405723. (Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, CICC 2007). doi: 10.1109/CICC.2007.4405723

Kim, Tae Hyoung ; Liu, Jason ; Kim, Chris H. / An 8T Subthreshold SRAM Cell Utilizing Reverse Short Channel Effect for Write Margin and Read Performance Improvement. Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, CICC 2007. Institute of Electrical and Electronics Engineers Inc., 2007. pp. 241-244 (Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, CICC 2007).

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abstract = "We propose a technique for improving write margin and read performance of 8T subthreshold SRAMs by using long channel devices to utilize the pronounced reverse short channel effect. Simulations show that the proposed cell at 0.2V has a write margin equivalent to a conventional cell at 0.27V. The Ion-to-Ioff ratio of the read path also improved from 169 to 271 and a 52\% speedup for read was achieved. The cell area overhead was 20\%.",

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An 8T Subthreshold SRAM Cell Utilizing Reverse Short Channel Effect for Write Margin and Read Performance Improvement

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