Amorphous mixed TiO2 and SiO2 films on Si(100) by chemical vapor deposition

R. C. Smith, C. J. Taylor, J. Roberts, N. Hoilien, S. A. Campbell, W. L. Gladfelter

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Amorphous thin films of composition TixSi1-xO2 have been grown by low pressure chemical vapor deposition on silicon (100) substrates using Si(O-Et)4 and either Ti(O-iPr)4 or anhydrous Ti(NO3)4 as the sources of SiO2 and TiO2, respectively. The substrate temperature was varied between 300 and 535°C, and the precursor flow rates ranged from 5 to 100 sccm. Under these conditions growth rates ranging from 0.6 to 90.0 nm/min were observed. As-deposited films were amorphous to X-rays and SEM micrographs showed smooth, featureless film surfaces. Cross-sectional TEM showed no compositional inhomogeneity. RBS revealed that x (from the formula TixSi1-xO2) was dependent upon the choice of TiO2 precursor. For films grown using TTIP-TEOS x could be varied by systematic variation of the deposition conditions. For the case of TN-TEOS x remained close to 0.5 under all conditions studied. One explanation is the existence of a specific chemical reaction between TN and TEOS prior to film deposition. TEOS was mixed with a CCl4 solution of TN at room temperature to produce an amorphous white powder (Ti/Si = 1.09) and 1HNMR of the CCl4 solution indicated resonances attributable to ethyl nitrate.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsL.A. Clenvenger, S.A. Campbell, P.R. Besser, S.B. Herner, J. Kittl
StatePublished - 2001
EventGate Stack and Silicide Issues in Silicon Processing - San Francisco, CA, United States
Duration: Apr 25 2000Apr 27 2000


OtherGate Stack and Silicide Issues in Silicon Processing
Country/TerritoryUnited States
CitySan Francisco, CA


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