Amorphous Ge substrates: Active or passive participants in electrical transport in ultrathin metal films?

B. Nease, A. M. Mack, G. C. Spalding, G. Martinez-Arizala, A. M. Goldman

Research output: Contribution to journalArticlepeer-review

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Abstract

A comparison has been made between R(T) curves of Bi films grown on ceramic substrates held near helium temperatures with those first grown in this manner, and then overlaid with amorphous Ge (aGe) while held at helium temperatures. The dramatic changes in R(T) resulting from the overlay suggest that aGe substrates play an active role in electrical transport. This result has implications for the interpretation of experiments on the superconductor-insulator transition.

Original languageEnglish (US)
Pages (from-to)2347-2348
Number of pages2
JournalPhysica B: Physics of Condensed Matter
Volume194-196
Issue numberPART 2
DOIs
StatePublished - Feb 2 1994

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