TY - JOUR
T1 - Amorphous Ge substrates
T2 - Active or passive participants in electrical transport in ultrathin metal films?
AU - Nease, B.
AU - Mack, A. M.
AU - Spalding, G. C.
AU - Martinez-Arizala, G.
AU - Goldman, A. M.
PY - 1994/2/2
Y1 - 1994/2/2
N2 - A comparison has been made between R(T) curves of Bi films grown on ceramic substrates held near helium temperatures with those first grown in this manner, and then overlaid with amorphous Ge (aGe) while held at helium temperatures. The dramatic changes in R(T) resulting from the overlay suggest that aGe substrates play an active role in electrical transport. This result has implications for the interpretation of experiments on the superconductor-insulator transition.
AB - A comparison has been made between R(T) curves of Bi films grown on ceramic substrates held near helium temperatures with those first grown in this manner, and then overlaid with amorphous Ge (aGe) while held at helium temperatures. The dramatic changes in R(T) resulting from the overlay suggest that aGe substrates play an active role in electrical transport. This result has implications for the interpretation of experiments on the superconductor-insulator transition.
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U2 - 10.1016/0921-4526(94)91673-X
DO - 10.1016/0921-4526(94)91673-X
M3 - Article
AN - SCOPUS:0028759993
SN - 0921-4526
VL - 194-196
SP - 2347
EP - 2348
JO - Physica B: Physics of Condensed Matter
JF - Physica B: Physics of Condensed Matter
IS - PART 2
ER -