Ambipolar Black Phosphorus MOSFETs with Record n-Channel Transconductance

Nazila Haratipour, Steven J. Koester

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

Ambipolar black phosphorus MOSFETs with record n-channel extrinsic transconductance are reported. The devices consist of multilayer black phosphorus aligned to a local back-gate electrode with 10-nm-thick HfO2 gate dielectric. Before passivation, devices with 0.3-μm gate length behaved as p-MOSFETs with peak extrinsic transconductance, gm, of 282 μS/μm at VDS=-2 V. After passivation, the same devices displayed the ambipolar behavior, and when tested as n-MOSFETs, had peak gm =66 μS/μm at VDS = +2 V, and similar devices on the same wafer had gm as high as 80 μS/μm. These results are an important step toward the realization of high-performance black phosphorus complementary logic circuits.

Original languageEnglish (US)
Article number7323815
Pages (from-to)103-106
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number1
DOIs
StatePublished - Jan 2016

Keywords

  • Dielectrics
  • Logic gates
  • MOSFET
  • MOSFET circuits
  • Passivation
  • Phosphorus
  • Transconductance

How much support was provided by MRSEC?

  • Primary

Reporting period for MRSEC

  • Period 2

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