Aluminum particle formation in the gas phase of a low pressure chemical vapor deposition reactor using dimethylethylamine alane (AlH3) as a precursor

Michael G. Simmonds, Wayne L. Gladfelter, Haojiang Li, Peter H. McMurry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Particle formation in the gas phase during the chemical vapor deposition of Al using dimethylethylamine alane was studied. Typical sizes of the crystalline Al particles monitored were in the range 20 nm to 1000 nm. Introducing trace amounts of H2O, CO and O2 into the reactor during the flow of the precursor caused an increase in the number of particles. Our results suggested that Al particle formation was induced by impurities in the gas phase although competing mechanisms could not be ruled out.

Original languageEnglish (US)
Title of host publicationChemical Perspectives of Microelectronic Materials III
PublisherPubl by Materials Research Society
Pages317-322
Number of pages6
ISBN (Print)1558991778
StatePublished - Jan 1 1993
EventProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials - Boston, MA, USA
Duration: Nov 30 1992Dec 3 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume282
ISSN (Print)0272-9172

Other

OtherProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials
CityBoston, MA, USA
Period11/30/9212/3/92

Fingerprint

Low pressure chemical vapor deposition
Aluminum
Gases
Carbon Monoxide
Chemical vapor deposition
Impurities
Crystalline materials
N,N-dimethylethylamine

Cite this

Simmonds, M. G., Gladfelter, W. L., Li, H., & McMurry, P. H. (1993). Aluminum particle formation in the gas phase of a low pressure chemical vapor deposition reactor using dimethylethylamine alane (AlH3) as a precursor. In Chemical Perspectives of Microelectronic Materials III (pp. 317-322). (Materials Research Society Symposium Proceedings; Vol. 282). Publ by Materials Research Society.

Aluminum particle formation in the gas phase of a low pressure chemical vapor deposition reactor using dimethylethylamine alane (AlH3) as a precursor. / Simmonds, Michael G.; Gladfelter, Wayne L.; Li, Haojiang; McMurry, Peter H.

Chemical Perspectives of Microelectronic Materials III. Publ by Materials Research Society, 1993. p. 317-322 (Materials Research Society Symposium Proceedings; Vol. 282).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Simmonds, MG, Gladfelter, WL, Li, H & McMurry, PH 1993, Aluminum particle formation in the gas phase of a low pressure chemical vapor deposition reactor using dimethylethylamine alane (AlH3) as a precursor. in Chemical Perspectives of Microelectronic Materials III. Materials Research Society Symposium Proceedings, vol. 282, Publ by Materials Research Society, pp. 317-322, Proceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials, Boston, MA, USA, 11/30/92.
Simmonds MG, Gladfelter WL, Li H, McMurry PH. Aluminum particle formation in the gas phase of a low pressure chemical vapor deposition reactor using dimethylethylamine alane (AlH3) as a precursor. In Chemical Perspectives of Microelectronic Materials III. Publ by Materials Research Society. 1993. p. 317-322. (Materials Research Society Symposium Proceedings).
Simmonds, Michael G. ; Gladfelter, Wayne L. ; Li, Haojiang ; McMurry, Peter H. / Aluminum particle formation in the gas phase of a low pressure chemical vapor deposition reactor using dimethylethylamine alane (AlH3) as a precursor. Chemical Perspectives of Microelectronic Materials III. Publ by Materials Research Society, 1993. pp. 317-322 (Materials Research Society Symposium Proceedings).
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