Al2O3β-Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing

Hong Zhou; Sami Alghamdi; Mengwei Si; Gang Qiu; Peide D. Ye

doi:10.1109/LED.2016.2609202

Al₂O₃β-Ga₂O₃(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing

Hong Zhou
, Sami Alghamdi
, Mengwei Si
, Gang Qiu
, Peide D. Ye

Research output: Contribution to journal › Article › peer-review

145 Scopus citations

Abstract

In this letter, we report on the improvement of atomic layer deposited (ALD) Al₂O₃/β-Ga₂O₃ (-201) interface quality through piranha pretreatment and postdeposition annealing (PDA). The high quality interface is verified via the temperature dependent capacitance-voltage (C-V) and photo-assisted (deep UV) C-V measurements, considering its ultra wide bandgap of 4.8 eV for β-Ga₂O₃. A low C-V hysteresis of 0.1 V from the measurement frequency of 1 kHz to 1 MHz is obtained, compared with the hysteresis of 0.45 V without piranha optimization. An average interface trap density (D_it) of 2.3 × 10¹¹ cm^-2 · eV^-1 is extracted from the photo C-V measurements. Piranha pretreatments and PDA turn out to be an effective way to improve the ALD Al₂O₃/β-Ga₂O₃ (-201) interface for future high quality Ga₂O₃ metal-oxide-semiconductor field-effect transistors.

Original language	English (US)
Pages (from-to)	1411-1414
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	11
DOIs	https://doi.org/10.1109/LED.2016.2609202
State	Published - Nov 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

Keywords

ALD AlO
annealing
hysteresis
interface
piranha
β-Ga2O3

Publisher link

10.1109/LED.2016.2609202

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@article{3368a8e4937f4191b2c91a9bc57f5694,

title = "Al2O3β-Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing",

abstract = "In this letter, we report on the improvement of atomic layer deposited (ALD) Al2O3/β-Ga2O3 (-201) interface quality through piranha pretreatment and postdeposition annealing (PDA). The high quality interface is verified via the temperature dependent capacitance-voltage (C-V) and photo-assisted (deep UV) C-V measurements, considering its ultra wide bandgap of 4.8 eV for β-Ga2O3. A low C-V hysteresis of 0.1 V from the measurement frequency of 1 kHz to 1 MHz is obtained, compared with the hysteresis of 0.45 V without piranha optimization. An average interface trap density (Dit) of 2.3 × 1011 cm-2 · eV-1 is extracted from the photo C-V measurements. Piranha pretreatments and PDA turn out to be an effective way to improve the ALD Al2O3/β-Ga2O3 (-201) interface for future high quality Ga2O3 metal-oxide-semiconductor field-effect transistors.",

keywords = "ALD AlO, annealing, hysteresis, interface, piranha, β-Ga2O3",

author = "Hong Zhou and Sami Alghamdi and Mengwei Si and Gang Qiu and Ye, \{Peide D.\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2016",

month = nov,

doi = "10.1109/LED.2016.2609202",

language = "English (US)",

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pages = "1411--1414",

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T1 - Al2O3β-Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing

AU - Zhou, Hong

AU - Alghamdi, Sami

AU - Si, Mengwei

AU - Qiu, Gang

AU - Ye, Peide D.

PY - 2016/11

Y1 - 2016/11

N2 - In this letter, we report on the improvement of atomic layer deposited (ALD) Al2O3/β-Ga2O3 (-201) interface quality through piranha pretreatment and postdeposition annealing (PDA). The high quality interface is verified via the temperature dependent capacitance-voltage (C-V) and photo-assisted (deep UV) C-V measurements, considering its ultra wide bandgap of 4.8 eV for β-Ga2O3. A low C-V hysteresis of 0.1 V from the measurement frequency of 1 kHz to 1 MHz is obtained, compared with the hysteresis of 0.45 V without piranha optimization. An average interface trap density (Dit) of 2.3 × 1011 cm-2 · eV-1 is extracted from the photo C-V measurements. Piranha pretreatments and PDA turn out to be an effective way to improve the ALD Al2O3/β-Ga2O3 (-201) interface for future high quality Ga2O3 metal-oxide-semiconductor field-effect transistors.

AB - In this letter, we report on the improvement of atomic layer deposited (ALD) Al2O3/β-Ga2O3 (-201) interface quality through piranha pretreatment and postdeposition annealing (PDA). The high quality interface is verified via the temperature dependent capacitance-voltage (C-V) and photo-assisted (deep UV) C-V measurements, considering its ultra wide bandgap of 4.8 eV for β-Ga2O3. A low C-V hysteresis of 0.1 V from the measurement frequency of 1 kHz to 1 MHz is obtained, compared with the hysteresis of 0.45 V without piranha optimization. An average interface trap density (Dit) of 2.3 × 1011 cm-2 · eV-1 is extracted from the photo C-V measurements. Piranha pretreatments and PDA turn out to be an effective way to improve the ALD Al2O3/β-Ga2O3 (-201) interface for future high quality Ga2O3 metal-oxide-semiconductor field-effect transistors.

KW - ALD AlO

KW - annealing

KW - hysteresis

KW - interface

KW - piranha

KW - β-Ga2O3

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DO - 10.1109/LED.2016.2609202

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