All-Printed, Self-Aligned Carbon Nanotube Thin-Film Transistors on Imprinted Plastic Substrates

Donghoon Song, Fazel Zare Bidoky, Woo Jin Hyun, S. Brett Walker, Jennifer A. Lewis, C. Daniel Frisbie

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

We present a self-aligned process for printing thin-film transistors (TFTs) on plastic with single-walled carbon nanotube (SWCNT) networks as the channel material. The SCALE (self-aligned capillarity-assisted lithography for electronics) process combines imprint lithography with inkjet printing. Specifically, inks are jetted into imprinted reservoirs, where they then flow into narrow device cavities due to capillarity. Here, we incorporate a composite high-k gate dielectric and an aligned conducting polymer gate electrode in the SCALE process to enable a smaller areal footprint than prior designs that yields low-voltage SWCNT TFTs with average p-type carrier mobilities of 4 cm2/V·s and ON/OFF current ratios of 104. Our work demonstrates the promising potential of the SCALE process to fabricate SWCNT-based TFTs with favorable I-V characteristics on plastic substrates.

Original languageEnglish (US)
Pages (from-to)15926-15932
Number of pages7
JournalACS Applied Materials and Interfaces
Volume10
Issue number18
DOIs
StatePublished - May 9 2018

Keywords

  • BaTiO-based dielectric
  • high-performance thin-film transistors
  • imprinted substrate
  • reservoirs/capillary channels
  • self-aligned printing
  • single-walled carbon nanotubes

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