We present a self-aligned process for printing thin-film transistors (TFTs) on plastic with single-walled carbon nanotube (SWCNT) networks as the channel material. The SCALE (self-aligned capillarity-assisted lithography for electronics) process combines imprint lithography with inkjet printing. Specifically, inks are jetted into imprinted reservoirs, where they then flow into narrow device cavities due to capillarity. Here, we incorporate a composite high-k gate dielectric and an aligned conducting polymer gate electrode in the SCALE process to enable a smaller areal footprint than prior designs that yields low-voltage SWCNT TFTs with average p-type carrier mobilities of 4 cm2/V·s and ON/OFF current ratios of 104. Our work demonstrates the promising potential of the SCALE process to fabricate SWCNT-based TFTs with favorable I-V characteristics on plastic substrates.
Bibliographical noteFunding Information:
This work was supported by the Multi-University Research Initiative (MURI) program (N00014-11-1-0690) sponsored by the Office of Naval Research. Parts of this work were performed at the Characterization Facility and the Nano-Fabrication Center of the University of Minnesota. The authors thank Geoffrey A. Rojas, Chang-Hyun Kim and Krystopher Jochem for helpful discussions. C.D.F. acknowledges Xerox Corporation for financial support.
© 2018 American Chemical Society.
- BaTiO-based dielectric
- high-performance thin-film transistors
- imprinted substrate
- reservoirs/capillary channels
- self-aligned printing
- single-walled carbon nanotubes