All-Printed, Self-Aligned Carbon Nanotube Thin-Film Transistors on Imprinted Plastic Substrates

Donghoon Song; Fazel Zare Bidoky; Woo Jin Hyun; S. Brett Walker; Jennifer A. Lewis; C. Daniel Frisbie

doi:10.1021/acsami.8b01581

All-Printed, Self-Aligned Carbon Nanotube Thin-Film Transistors on Imprinted Plastic Substrates

Donghoon Song, Fazel Zare Bidoky, Woo Jin Hyun, S. Brett Walker, Jennifer A. Lewis, C. Daniel Frisbie

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

We present a self-aligned process for printing thin-film transistors (TFTs) on plastic with single-walled carbon nanotube (SWCNT) networks as the channel material. The SCALE (self-aligned capillarity-assisted lithography for electronics) process combines imprint lithography with inkjet printing. Specifically, inks are jetted into imprinted reservoirs, where they then flow into narrow device cavities due to capillarity. Here, we incorporate a composite high-k gate dielectric and an aligned conducting polymer gate electrode in the SCALE process to enable a smaller areal footprint than prior designs that yields low-voltage SWCNT TFTs with average p-type carrier mobilities of 4 cm²/V·s and ON/OFF current ratios of 10⁴. Our work demonstrates the promising potential of the SCALE process to fabricate SWCNT-based TFTs with favorable I-V characteristics on plastic substrates.

Original language	English (US)
Pages (from-to)	15926-15932
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	18
DOIs	https://doi.org/10.1021/acsami.8b01581
State	Published - May 9 2018

Bibliographical note

Funding Information:
This work was supported by the Multi-University Research Initiative (MURI) program (N00014-11-1-0690) sponsored by the Office of Naval Research. Parts of this work were performed at the Characterization Facility and the Nano-Fabrication Center of the University of Minnesota. The authors thank Geoffrey A. Rojas, Chang-Hyun Kim and Krystopher Jochem for helpful discussions. C.D.F. acknowledges Xerox Corporation for financial support.

Publisher Copyright:
© 2018 American Chemical Society.

Keywords

BaTiO-based dielectric
high-performance thin-film transistors
imprinted substrate
reservoirs/capillary channels
self-aligned printing
single-walled carbon nanotubes

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10.1021/acsami.8b01581

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abstract = "We present a self-aligned process for printing thin-film transistors (TFTs) on plastic with single-walled carbon nanotube (SWCNT) networks as the channel material. The SCALE (self-aligned capillarity-assisted lithography for electronics) process combines imprint lithography with inkjet printing. Specifically, inks are jetted into imprinted reservoirs, where they then flow into narrow device cavities due to capillarity. Here, we incorporate a composite high-k gate dielectric and an aligned conducting polymer gate electrode in the SCALE process to enable a smaller areal footprint than prior designs that yields low-voltage SWCNT TFTs with average p-type carrier mobilities of 4 cm2/V·s and ON/OFF current ratios of 104. Our work demonstrates the promising potential of the SCALE process to fabricate SWCNT-based TFTs with favorable I-V characteristics on plastic substrates.",

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All-Printed, Self-Aligned Carbon Nanotube Thin-Film Transistors on Imprinted Plastic Substrates

Abstract

Bibliographical note

Keywords

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