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Gate Dielectric
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Graphene Field-effect Transistor
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100%
Graphene
85%
Dielectric
42%
HfO2
28%
Low Temperature
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Surrounding Materials
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Temperature Analysis
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Exfoliated Graphene
14%
Dirac Voltage
14%
Border Traps
14%
Frequency Dependent Capacitance
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HfO2 Dielectric
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Spin Lifetime
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14%
Capacitance-voltage Measurements
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Gate Structure
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Optical Absorption
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Am(III)
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Engineering
Field-Effect Transistor
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Gate Dielectric
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Dielectrics
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Chemical Vapor Deposition
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Graphene
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Field Effect Transistors
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Boron Nitride
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Dielectric Material
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Density
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Transistor
6%
Capacitance
6%