All-CVD graphene field-effect transistors with h-BN gate dielectric and local back gate

Mona A. Ebrish, Steven J. Koester

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Introduction: Since the original experiments on exfoliated graphene a decade ago, extensive research has been performed on how to exploit graphene's unique properties, such as the low density of states, high mobility, tunable optical absorption and long spin lifetimes. However, in order to utilize graphene for practical applications, the interface between graphene and the surrounding materials must be understood and improved. We have previously shown that by using temperature- and frequency-dependent capacitance-voltage (C-V) measurements, the nature of the traps near the interface between graphene and HfO2 can be probed [1-2]. In this work, we describe the electrical properties of all-CVD graphene field-effect transistors (gFETs) using hexagonal boron nitride (h-BN) as a gate dielectric and compare their performance with HfO2-dielectric gFETs. Prior work on using h-BN as a dielectric for gFETs has shown that the mobility of graphene on h-BN is 3-10 times higher than graphene on SiO2 [3]-[6]. In this work, we utilized a locally back-gated structure, which is useful to provide a one-to-one comparison between gFETs with different dielectrics. We show that h-BN gFETs have reduced hysteresis, and more positive Dirac voltages compared to the HfO2 devices. Furthermore, border traps are observed to be present in the h-BN gated devices and the transistor performance is limited by the quality of the CVD graphene as determined by low-temperature analysis. The results provide important insight for the further improvement of highperformance gFETs using h-BN dielectrics.

Original languageEnglish (US)
Title of host publication72nd Device Research Conference, DRC 2014 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages61-62
Number of pages2
ISBN (Print)9781479954056
DOIs
StatePublished - Jan 1 2014
Event72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States
Duration: Jun 22 2014Jun 25 2014

Other

Other72nd Device Research Conference, DRC 2014
CountryUnited States
CitySanta Barbara, CA
Period6/22/146/25/14

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    Ebrish, M. A., & Koester, S. J. (2014). All-CVD graphene field-effect transistors with h-BN gate dielectric and local back gate. In 72nd Device Research Conference, DRC 2014 - Conference Digest (pp. 61-62). [6872297] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2014.6872297