Abstract
Controlling the growth of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is an important step toward utilizing these materials for either electronics or catalysis. Here, we report a new surface-templated growth method that enables the fabrication of MoO2/MoS2 and MoO2/MoTe2 core/shell nanoplates epitaxially aligned on (0001)-oriented 4H-silicon carbide and sapphire substrates. These heterostructures are characterized by a variety of techniques to identify the chemical and structural nature of the interface. Scanning electron microscopy shows that the nanoplates feature 3-fold symmetry indicative of epitaxial growth. Raman spectroscopy indicates that the MoO2/MoS2 nanoplates are composed of co-localized MoO2 and MoS2, and transmission electron microscopy confirms that the nanoplates feature MoO2 cores with 2D MoS2 coatings. Locked-coupled X-ray diffraction shows that the interfacial planes of the MoO2 nanoplate cores belong to the {010} and {001} families. This method may be further generalized to create novel nanostructured interfaces with single-crystal substrates.
Original language | English (US) |
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Pages (from-to) | 1631-1636 |
Number of pages | 6 |
Journal | Journal of Physical Chemistry Letters |
Volume | 8 |
Issue number | 7 |
DOIs | |
State | Published - Apr 6 2017 |
Bibliographical note
Publisher Copyright:© 2017 American Chemical Society.