AlGaN metal-semiconductor-metal structure for pressure sensing applications

Keyphrases

• Sensing Applications 100%
• Pressure Sensing 100%
• Aluminum Gallium Nitride (AlGaN) 100%
• Metal-semiconductor-metal Structure 100%
• Hydrostatic Pressure 66%
• Atomic Force Microscopy 33%
• Optical Analysis 33%
• Current-voltage 33%
• Barrier Height 33%
• Mole Fraction 33%
• Band Structure Effects 33%
• UV-VIS Spectroscopy 33%
• Overpressure 33%
• High-resolution X-ray Diffraction (HRXRD) 33%
• I-V Measurement 33%
• Hall Effect Measurement 33%
• Schottky Contact 33%
• Electrical Analysis 33%
• Piezoelectric Structure 33%

Material Science

• Film 100%
• Piezoelectricity 50%
• Aluminum Nitride 50%
• UV-Visible Spectroscopy 50%
• Schottky Barrier 50%
• High Resolution X-Ray Diffraction 50%